A Flexible Solution-Processed Memristor

Dr Nadine Gergel-Hackett, Researcher

NIST, United States

United States

This presentation was given at Printed Electronics & Photovoltaics Europe 2010 on Apr 14, 2010.

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Presentation Summary

We have demonstrated a flexible, solution-processed, nonvolatile, low power, inexpensive, TiO2-based flexible memory component with electrical behavior that is consistent with a memristor, an electrical device that has recently been declared to be the missing fourth circuit element.
The memory device has operation voltage of less than 10 V, on/off ratios greater than 10,000:1, exhibits memory potential that is nonvolatile for over 1.2x106 s, and is operational after 4,000 flexes.
We are investigating the mechanism behind the memristor behavior, as well as the correlations between the device dimensions (e.g., contact area, film thickness) and the desired electrical behaviors.

Speaker Biography (Nadine Gergel-Hackett)

Nadine Gergel-Hackett received both her B.S. and Ph.D. from the Charles L. Brown Department of Electrical and Computer Engineering at the University of Virginia. She then held a National Research Council Research Associateship at the National Institute of Standards and Technology, where she is now an electrical engineer.

Dr. Gergel-Hackett's areas of interest include: hybrid non-traditional and traditional materials, devices, and electronics, and novel memory devices. She has published more than 20 manuscripts in both engineering and traditional scientific journals and proceedings, given over 20 contributed and invited talks, has patents pending, served as a co-chair of the INAC/NCN 5th Annual Workshop on Molecular Conduction and Molecular Scale Sensing in Purdue University West Lafayette, IN, 2007, and served on the program committee for the IEEE/ACM International Symposium on Nanoscale architectures in San Francisco, CA, 2009.