The performance of Indium Zinc Oxide Transparent TFTs Produced at Low Temperature.

Dr Mark Mann, Post Doc

Cambridge University, UK

United Kingdom

This presentation was given at Printed Electronics & Photovoltaics USA 2009 on Dec 03, 2009.

Presentation Summary

The structure of the TFT devices will be presented including the choice of gate dielectric and the variation of the properties of the indium zinc oxide with oxygen content.
A comparison of performance with equivalent amorphous silicon devices in terms of mobility (which is an order of magnitude greater) and threshold voltage.
Finally, the influence of the gate dielectric and thermal post-processing on the device properties will be detailed.

Speaker Biography (Mark Mann)

Mark Mann is a Research Associate at Cambridge University Engineering Department, having first joined in 2003. His main research focus is the application of sputtered thin-film transparent oxides to backplanes for active matrix OLED displays. He also continues to work on the controlled growth of carbon nanotubes and metal oxide nanowires for electronic devices.