Dr Shinpei Ogawa,
High-responsivity graphene photodetectors have been developed that operate in the middle-wavelength infrared (MWIR) or long-wavelength infrared (LWIR) region by exploiting the photogating effect. These photodetectors utilize graphene-based field-effect transistors combined with a photosensitizer, with the graphene being fabricated using chemical vapor deposition. High responsivity that significantly exceeds that of conventional IR photodetectors was achieved in both the MWIR and LWIR regions due to the photogating effect.
Speaker Biography (Shinpei Ogawa)
Shinpei Ogawa received his B.E., M.E., and Ph.D. degrees from the Department of Electronic Science and Engineering, Kyoto University, Japan, in 2000, 2002 and 2005, respectively. He has been with the Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Japan, since 2005. He works on the development of various advanced optoelectronic devices using graphene, plasmonics, metamaterials and MEMS.
He is currently a chief researcher and unit leader of graphene and other 2D materials, plasmonics, and metamaterials research.
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