Cubic-like Amorphous Hafnium Oxide: An Ultra-High-k Dielectric for Plastic Electronics

Dr Andrew Flewitt,
University of Cambridge
United Kingdom
 
Apr 04, 2012.

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Presentation Summary

• A new phase of hafnium oxide - cubic-like amorphous hafnium oxide - will be presented
• The material is deposited without substrate heating by a remote plasma sputtering method
• Material properties include a dielectric constant of 30, a resistivity of 10^14 ohm.cm and a breakdown strength of 3MV/cm
• Deposition can be scaled to large areas and is ideally suited to large area plastic electronics where uniformity is critical

Speaker Biography (Andrew Flewitt)

Andrew J. Flewitt received the B.Sc. degree in physics from the University of Birmingham, Birmingham, U.K., in 1994 and the Ph.D. degree in scanning tunneling microscopy of amorphous silicon from the University of Cambridge, Cambridge, U.K., in 1998. Following this, he was a Research Associate studying the low-temperature growth of silicon-based materials in the Engineering Department, University of Cambridge. He was appointed to a Lectureship in the same Department in 2002. Since 2009, he has held the position of University Reader in Electronic Engineering. His research interests span a broad range of large area electronics and related fields, including thin film transistors and MEMS devices. Dr. Flewitt is a Chartered Physicist and a Member of the Institute of Physics and the Institution of Engineering and Technology.

Company Profile (University of Cambridge, Dept of Engineering)

University of Cambridge, Dept of Engineering logo
Cambridge University Engineering Department, which was rated as a 5* Department in the last Research Assessment Exercise, has been carrying out research in thin film transistors based on amorphous silicon and other inorganic materials for more than ten years. It has a state-of-the-art clean facility within the Centre for Advanced Photonics and Electronics. This includes 160 m2 of Class 10,000 laboratories which houses a range of deposition systems for producing a diverse range of materials including metallic thin films, amorphous silicon, high-k dielectrics, carbon nanotubes and silicon nanowires. There is a further 140 m2 of Class 1,000 laboratories which includes processing facilities for 1 µm photolithography and nanoparticle-polymer composite processing. Finally, there is 140 m2 of Class 100 laboratories which includes a rapid thermal annealer, deep reactive ion etch system, liquid crystal processing facility, 0.5 µm double-sided mask aligner and an e-beam lithography system.