Power Electronics for Electric Vehicles 2026-2036: Technologies, Markets, and Forecasts
Covering Power Electronics forecasts in US$ and GW for 2026-2036, including the inverter, onboard charger, and DC-DC converter. Supply chain analysis of Si IGBTs and SiC MOSFETs. Automotive GaN companies and integrated Power Electronics.
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The demand for electric vehicles (EVs) will grow rapidly over the next decade, and the EV power electronics market will grow even faster. To tackle consumer concerns about battery electric vehicles (BEVs) compared to internal combustion engines, automotive OEMs are looking for ways to increase range and speed up charging. Aside from battery and motor technologies, wide bandgap (WBG) semiconductors, silicon carbide (SiC), and gallium nitride (GaN), have the potential to revolutionize EV powertrains in displacing the incumbent silicon (Si) IGBTs and MOSFETs with 800V architectures and significant efficiency gains.
IDTechEx's report "Power Electronics for Electric Vehicles 2026-2036" analyzes the growth potential and future trends in WBG technologies, from the rapid scaling of SiC MOSFETs to the potential of GaN to consolidate itself in the EV power electronics market. The report includes granular forecasts detailing unit sales, power (GW), and market size (US$) demand segmented by inverters, onboard chargers (OBC), and DC-DC converters by voltage (600V, 1200V) and semiconductor technology (Si, SiC, GaN).
IDTechEx benchmarks traction inverters that deploy different semiconductor technologies, the arrow indicating the future progression of GaN traction inverters. Source: Power Electronics for Electric Vehicles 2026-2036
SiC supply chain
SiC has an established supply chain from raw materials to wafers, to processing technologies to device packaging. This, however, doesn't mean that there isn't room for development in the SiC supply chain. SiC wafer supply is an area previously dominated by US companies, and OEMs are looking to multisource their SiC to guarantee supply and cost. A number of Chinese players have entered the SiC wafer market in the past year and are scaling up 200mm wafer production. The transition from 150mm to 200mm SiC wafers will significantly increase production capacity, which is vital for the automotive industry. Furthermore, there is a push to globalize the SiC supply chain, with companies in Europe and Asia scaling up wafer operations.
SiC MOSFETs will continue to be more expensive than Si IGBTs, despite significant reductions in prices over the past 5 years. This is due to infrastructure requirements, the much higher price of SiC wafers, and energy-intensive processing steps. IDTechEx's report carries out a cost analysis of implementing SiC MOSFETs in EVs, examining the impact at both the device and vehicle levels. Leading semiconductor and tier-1 suppliers, as well as automotive OEMs, such as BYD and Mercedes, have started vertical integration to strengthen their supply chain control (raw materials, ingot, wafer processing, packaging, and system design). OEMs are collaborating with automotive semiconductor suppliers to get the most out of their powertrains.
SiC MOSFET adoption in the EV market
Si IGBTs have been the singular option for the traction inverter for 20 years, accompanied by Si MOSFETs and diodes for the onboard charger and DC-DC converter. They have proven to be reliable at the medium-high power levels for the inverter, yet current generation EVs are transitioning to SiC MOSFETs, and ramping in market share will continue to grow, with IDTechEx predicting that SiC MOSFETs will be the majority of the EV inverter market by 2035. Compared with Si IGBTs, SiC MOSFETs offer several desirable features, including high-temperature operation, higher thermal conductivity, 5 times faster switching speeds potentially increasing EV ranges by 7%, and a 20% smaller die and smaller general form factor for weight and volume savings. Development in SiC MOSFET technology, from packaging to trench technologies has improved massively over the past 10 years, to tackle concerns over the supply chain, thermal management, and reliability. More information on the SiC MOSFETs and supply chain analysis can be found in "Power Electronics for Electric Vehicles 2026-2036".
SiC MOSFETs will continue to eat up market share, with 1200V MOSFETs enabling 800V architectures. GaN will eventually enter the market for traction inverters and be a significant part of the market by 2026. Source: "Power Electronics for Electric Vehicles 2026-2036"
OBCs and DC-DC converters operate at powers an order of magnitude lower than inverters, yet the advantages of SiC MOSFET persist: higher power density, a reduction in losses, and a slight increase in vehicle range. Moreover, SiC in the OBC allows for faster charging, and in the DC-DC converter, transfers power more efficiently to the low voltage battery, making the auxiliary power-hungry devices in an EV (infotainment, power steering, headlights) less wasteful. This drives SiC MOSFET adoption in the OBC and DC-DC converters, and the lower power requirements mean that IDTechEx predicts GaN to enter this market earlier than for inverters.
GaN Technologies for Automotive
GaN HEMTs and FETs have a role in the automotive semiconductor market. The extent of this role depends on certain developments needed to maximize the potential of a material that can convert power more efficiently than SiC. Currently, most GaN devices on the market are limited to 650V and are lateral in construction. To maximize the potential of automotive GaN, steps need to be taken to make it feasible at higher voltages, especially as 800V architectures gain market share in the mainstream EV sector. Whether through improvements in engineering technology or at the device level, IDTechEx analyzes ways that GaN can realize its potential in the automotive industry. Alternatives to GaN-on-Si devices are investigated, and companies analyzed. IDTechEx's research "Power Electronics for Electric Vehicles 2026-2036" includes a 10-year forecast of GaN in power electronics for EVs, expecting significant headway for OBCs and DC-DC converters, with inverters to follow later.
Power Electronics Innovations
While ongoing improvements at the device level continue, OEMs and tier-one suppliers also focus on enhancing EV performance. Key goals include reductions in wiring size and costs of the passive components, as well as understanding the most effective cooling methods. The integration of power electronics within the powertrain represents a key growth area for EVs, aiming to maximize performance while minimizing cost. IDTechEx examines available market solutions and active components in this space. The degree of integration varies widely, ranging from mechanical integration to electronic integration, with the potential to consolidate all power electronics into a single unit. Other innovations include the adoption of hybrid switch inverters, single-stage onboard chargers, and power electronics integrated directly into the high voltage battery.
Key Aspects
This report provides the following key information:
- Insights into advances in electric vehicle (EV) power electronics: the inverter, onboard charger (OBC) and DC-DC converter
- Adoption of wide bandgap (WBG) semiconductors GaN and SiC
- Supply chain for SiC MOSFETs and Si IGBTs
- Analysis of 800V architectures and integration of power electronics
- Other key trends seen in the power electronics industry for EVs
- Granular 10 year forecasts in US$ and GW
| Report Metrics | Details |
|---|---|
| Historic Data | 2015 - 2025 |
| CAGR | The automotive power electronics market will exceed US$42 billion by 2036. This is a CAGR of 10% from 2026. |
| Forecast Period | 2026 - 2036 |
| Forecast Units | Volume (units), GW, US$ |
| Regions Covered | Worldwide |
| Segments Covered | SiC MOSFET, Si IGBT, GaN, GaN HEMT, Inverters, Onboard Chargers, DC-DC Converters |
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| 1. | EXECUTIVE SUMMARY |
| 1.1. | Report Introduction |
| 1.2. | Power Electronics in Electric Vehicles |
| 1.3. | Benchmarking Silicon, Silicon Carbide & Gallium Nitride Semiconductors |
| 1.4. | GaN vs SiC Potential in the Inverter |
| 1.5. | IDTechEx Inverter Benchmarking For Si, SiC, and GaN |
| 1.6. | Automotive GaN Device Suppliers are Growing |
| 1.7. | Progress of Different Applications of GaN |
| 1.8. | 200mm SiC Wafer Production Worldwide |
| 1.9. | Vertical Integration: Acquisitions and Collaborations |
| 1.10. | SiC Impact on the Inverter Cost |
| 1.11. | Si IGBT and SiC MOSFET Price Comparison |
| 1.12. | SiC MOSFET by Automotive OEMs and Suppliers - Leading OEMs (1) |
| 1.13. | Si IGBT Suppliers to Leading OEMs (1) |
| 1.14. | SiC Drives 800V Platforms |
| 1.15. | Ways to have 400V DC Charging Compatibility |
| 1.16. | 800V Charging Speeds |
| 1.17. | 800V Platforms SiC and Si IGBT Inverters |
| 1.18. | 800V Platforms SiC and Si IGBT Inverters (2) |
| 1.19. | Integration of Power Electronics |
| 1.20. | Integrated OBC with DC-DC converter |
| 1.21. | Traction Integrated Onboard Charger |
| 1.22. | Comparison of Single-Sided Cooling and Double-Sided Cooling |
| 1.23. | Inverter Market Share 2023-2036: GaN 600V, Si IGBT 600V, SiC MOSFET 600V, 1200V |
| 1.24. | Inverter Forecast 2023-2036 (GW): GaN 600V, Si IGBT 600V, SiC MOSFET 600V, 1200V |
| 1.25. | OBC Forecast: Si, SiC, GaN 2023-2036 (GW) |
| 1.26. | DC-DC Converter Forecast: Si, SiC, GaN 2023-2036 (GW) |
| 1.27. | Inverter, OBC, DC-DC Converter Forecast 2023-2036 (GW) |
| 1.28. | Inverter, OBC, DC-DC Converter Forecast 2023-2036 (US$ billion) |
| 2. | ELECTRIC VEHICLE MARKETS: REGIONAL TRENDS AND FUTURE GROWTH |
| 2.1. | Electric Vehicle Definitions |
| 2.2. | Electric Vehicles: Typical Specs |
| 2.3. | Exponential Growth in Regional EV Markets |
| 2.4. | Regional Trends: US 2024 |
| 2.5. | Regional Trends: China 2024 |
| 2.6. | Regional Trends: Europe 2024 |
| 2.7. | Europe Regulations - Overview |
| 2.8. | EU Emissions and Targets |
| 2.9. | Hybrid Car Sales Peak |
| 2.10. | Powertrain Tailpipe Emissions Comparison |
| 2.11. | Cars - Total Cost of Ownership |
| 2.12. | Chip Shortages - 2020 to 2023 |
| 2.13. | Chip Shortages - Automaker Reactions |
| 2.14. | Chip Shortages - Electric Vehicles |
| 3. | OVERVIEW OF EV POWER ELECTRONICS AND WBG SEMICONDUCTORS |
| 3.1. | Introduction and Benchmarking Si, SiC and GaN |
| 3.1.1. | What is Power Electronics? |
| 3.1.2. | Power Electronics Use in Electric Vehicles |
| 3.1.3. | Transistor History & MOSFET Overview |
| 3.1.4. | Wide Bandgap (WBG) Semiconductor Advantages & Disadvantages |
| 3.1.5. | Benchmarking Silicon, Silicon Carbide & Gallium Nitride Semiconductors |
| 3.1.6. | Switching Losses: Si vs SiC vs GaN |
| 3.1.7. | Inverter, OBC, DC-DC converter |
| 3.1.8. | Advantages of SiC Material |
| 3.1.9. | Si IGBT and SiC MOSFET Price Comparison |
| 3.1.10. | SiC and GaN Device Cost Comparison |
| 3.1.11. | Limitations of SiC Power Devices |
| 3.1.12. | GaN's Potential to Reach High Voltage |
| 3.1.13. | Qromis Engineered Substrate for GaN Power: QST |
| 3.1.14. | SiC & GaN have Substantial Room for Improvement |
| 3.1.15. | GaN to Become Preferred OBC Technology |
| 3.1.16. | How GaN is implemented into an OBC |
| 3.1.17. | GaN Systems' Onboard Charger |
| 3.1.18. | Challenges for GaN Devices |
| 3.1.19. | SiC Power Roadmap |
| 3.1.20. | Applications Summary for WBG Devices |
| 3.2. | GaN Companies |
| 3.2.1. | Automotive GaN Device Suppliers are Growing |
| 3.2.2. | Progress of Different Applications of GaN |
| 3.2.3. | Which Substrate will Prevail for GaN? |
| 3.2.4. | Enhancement Mode vs Depletion Mode |
| 3.2.5. | GaN Systems |
| 3.2.6. | Texas Instruments and STMicroelectronics |
| 3.2.7. | Renesas (Transphorm) |
| 3.2.8. | VisIC Technologies |
| 3.2.9. | Efficient Power Conversion |
| 3.2.10. | Nexperia |
| 3.2.11. | GaN vs SiC potential in the Inverter |
| 3.2.12. | Ricardo: GaN in the Automotive Market |
| 3.2.13. | Innoscience |
| 3.2.14. | Power Integrations |
| 3.2.15. | Inovance Automotive: GaN |
| 3.2.16. | UAES CharCON HyperGaN |
| 3.2.17. | Cost and Volume Reductions of a GaN OBC |
| 3.2.18. | PCIM 2025: Onboard Charger Trends |
| 3.2.19. | Other GaN Companies: Qromis, QPT, BelGaN, Cambridge GaN Devices, Odyssey Semiconductor |
| 3.2.20. | NXP Inverter Predictions |
| 3.2.21. | Single Stage OBCs |
| 3.2.22. | Current Landscape for OBCs |
| 3.2.23. | GaN in OBCs: Ahead of Forecasts |
| 3.2.24. | Current Inverter Landscape |
| 3.2.25. | Shanghai Electric Drive: GaN Inverter |
| 3.3. | Inverter, OBC, Converter Design & Si, SiC, GaN Outlook |
| 3.3.1. | Inverter, OBC, Converter Design & Si, SiC, GaN Outlook |
| 3.3.2. | Inverter Overview |
| 3.3.3. | Pulse Width Modulation |
| 3.3.4. | Traditional EV Inverter |
| 3.3.5. | Discretes & Modules |
| 3.3.6. | Inverter Printed Circuit Boards |
| 3.3.7. | Inverter Components and Cost |
| 3.3.8. | Electric Vehicle Inverter Benchmarking |
| 3.3.9. | Electric Vehicle Inverter Benchmarking 2 |
| 3.3.10. | SiC Impact on the Inverter Package |
| 3.3.11. | IDTechEx Inverter Benchmarking |
| 3.3.12. | Inverter Forecast 2023-2036 (GW): GaN 600V, Si IGBT 600V, SiC MOSFET 600V, 1200V |
| 3.3.13. | OBC Forecast: Si, SiC, GaN 2023-2036 (GW) |
| 3.3.14. | DC-DC Converter Forecast: Si, SiC, GaN 2023-2036 (GW) |
| 3.3.15. | Onboard Charger Circuit Components |
| 3.3.16. | Tesla Onboard Charger / DC-DC Converter |
| 3.3.17. | OBC by Level: 4kW, 6-11.5kW, 16-22kW 2020-2036 |
| 4. | WIDE BANDGAP SEMICONDUCTOR MANUFACTURING CHAIN |
| 4.1. | SiC Manufacturing |
| 4.1.1. | Introduction |
| 4.1.2. | Si IGBT Production: Raw Material to EV |
| 4.1.3. | SiC MOSFET Production: Raw Material to EV |
| 4.1.4. | SiC-Specific Equipment |
| 4.1.5. | From 150mm to 200mm: Potential Cost Advantages |
| 4.1.6. | 200mm Wafer Die Count Advantage |
| 4.1.7. | 200mm SiC Wafer Production Worldwide |
| 4.1.8. | 2025: The Transition to 8-inch SiC Wafers Continue |
| 4.1.9. | Vertical Integration: Acquisitions and Collaborations |
| 4.1.10. | Denso: Research and Development for Faster SiC Crystal Growth |
| 4.1.11. | Siltectra: Cold Split Technology |
| 4.1.12. | SmartSiC Technology from SOITEC |
| 4.1.13. | Summary of SmartSiC Advantages |
| 4.1.14. | Sumitomo Metal Mining: SiCkrest |
| 4.1.15. | Sumitomo Metal Mining: SiCkrest (2) |
| 4.2. | GaN Manufacturing |
| 4.2.1. | Which Substrate will Prevail for GaN? |
| 4.2.2. | TSMC To Exit GaN Foundry Business |
| 4.2.3. | GaN vs Si: Die to Vehicle Level |
| 4.2.4. | Energy Demand of Processes: Si vs GaN |
| 5. | TRENDS IMPACTING POWER ELECTRONICS |
| 5.1. | Introduction |
| 5.1.1. | Improving The Efficiency of Power Electronics |
| 5.1.2. | Efficiency and Thermal gains, 800V |
| 5.1.3. | Examples of SiC in the automotive industry |
| 5.2. | SiC and 800V |
| 5.2.1. | SiC Drives 800V Platforms |
| 5.2.2. | 800V Charging Speeds |
| 5.2.3. | GMC Hummer: 800V charging without 800V architecture |
| 5.2.4. | Other Split Battery Pack Vehicles: Tesla, Porsche, Ford |
| 5.2.5. | Tesla Cybertruck: Split Battery with 800V Architecture |
| 5.2.6. | Porsche Taycan: Boost Converter |
| 5.2.7. | Preh - Charging Technology for 800V EVs |
| 5.2.8. | 400V SiC Platforms |
| 5.2.9. | 800V Platforms SiC and Si IGBT Inverters |
| 5.2.10. | 800V Platforms SiC and Si IGBT Inverters (2) |
| 5.2.11. | 800V Adoption 2023 |
| 5.2.12. | 800V Adoption 2024-2025 |
| 5.2.13. | 800V Model Announcements in China (2022-2025) |
| 5.2.14. | 800V For & Against |
| 5.2.15. | DCFC Impact on Li-ion Cells |
| 5.2.16. | Fast Charge Cell Design Hierarchy - Levers to Pull |
| 5.2.17. | DC Fast Charging levels |
| 5.2.18. | 800V Platform Discussion & Outlook |
| 5.2.19. | Hybrid Switch Inverters |
| 5.2.20. | Hybrid Switch Inverters |
| 5.2.21. | 3-Level Inverters to Unlock GaN |
| 5.3. | Integration of Power Electronics |
| 5.3.1. | Different Levels of Integration |
| 5.3.2. | Owning the Supply Chain is Key |
| 5.3.3. | Vitesco and Renault: High Voltage Box and One Box |
| 5.3.4. | Integrated OBC with DC-DC converter |
| 5.3.5. | Preh Combo Units |
| 5.3.6. | Renault Zoe: 43kW AC Charging |
| 5.3.7. | Traction Integrated Onboard charger |
| 5.3.8. | Traction iOBC suppliers |
| 5.3.9. | Hyundai E-GMP: 800V, SiC and power electronics integration |
| 5.3.10. | BorgWarner: Combined Inverter and DC-DC Converter |
| 5.3.11. | NXP Inverter Predictions |
| 5.4. | Mixing Si IGBTs and SiC MOSFETs |
| 5.4.1. | SiC Impact on the Inverter Cost |
| 5.4.2. | SiC MOSFET vs Si IGBT: Overall Vehicle Cost |
| 5.4.3. | Si IGBT and SiC MOSFET Price Comparison |
| 5.4.4. | SiC Diodes: Onboard Charger |
| 5.4.5. | SiC Diodes: Inverter |
| 5.4.6. | Other Hybrid SiC Suppliers |
| 5.4.7. | NXP Inverter Predictions |
| 5.5. | Other Trends |
| 5.5.1. | Trends in Power Electronics: Dual Inverters |
| 5.5.2. | Thermal Management of the Dual Inverter and Power Modules |
| 5.5.3. | The Battery as Power Electronics |
| 5.5.4. | Porsche |
| 6. | SUPPLY CHAIN FOR POWER SEMICONDUCTOR MATERIALS, DEVICES & OEMS |
| 6.1. | SiC MOSFET and Si IGBT Suppliers |
| 6.1.1. | Supply Developments: Infineon |
| 6.1.2. | Supply Developments: STMicroelectronics |
| 6.1.3. | Supply Developments: Wolfspeed |
| 6.1.4. | Supply Developments: ROHM |
| 6.1.5. | Supply Developments: Onsemi |
| 6.1.6. | SiC MOSFET by Automotive OEMs and Suppliers - Leading OEMs (1) |
| 6.1.7. | SiC MOSFET by Automotive OEMs and Suppliers - Emerging OEMs |
| 6.1.8. | Si IGBT Suppliers to Leading OEMs |
| 6.1.9. | Si IGBT Suppliers to Emerging OEMs |
| 6.1.10. | New SiC Fabrication Centres |
| 6.2. | Device Suppliers |
| 6.2.1. | Infineon CoolSiC Efficiency Gains |
| 6.2.2. | Infineon Establishing Major OEM Partnerships |
| 6.2.3. | Infineon Design Wins |
| 6.2.4. | ROHM Semiconductor Expands SiC Production Capacity |
| 6.2.5. | ROHM: SiC Partnerships with OEMs and Tier Ones |
| 6.2.6. | STMicroelectronics Releases ACEPACK in Race for Market Leadership |
| 6.2.7. | STMicro Portfolio for EV Power Electronics |
| 6.2.8. | Wolfspeed: Major Investment & OEM Partnerships for SiC |
| 6.2.9. | Onsemi EliteSiC |
| 6.2.10. | Navitas GeneSiC |
| 6.2.11. | Benchmarking GeneSiC and its Trench Assisted Planar Configurations |
| 6.2.12. | Qorvo |
| 6.2.13. | Qorvo SiC FET vs SiC MOSFET |
| 6.2.14. | Trench vs Planar |
| 6.3. | Tier-1 Suppliers |
| 6.3.1. | Delphi Technologies Supply Luxury Automakers with Viper SiC Module |
| 6.3.2. | BorgWarner |
| 6.3.3. | BorgWarner Integrated Drive Module for Ford |
| 6.3.4. | BorgWarner Design Wins |
| 6.3.5. | Dana |
| 6.3.6. | Vitesco |
| 6.3.7. | Vitesco Power Electronics Products |
| 6.3.8. | Vitesco Schaeffler Merger |
| 6.3.9. | Equipmake |
| 6.3.10. | LG-Magna |
| 6.3.11. | Hitachi Double Sided IGBTs to Major OEM |
| 6.3.12. | Continental / Jaguar Land Rover |
| 6.3.13. | Helix CTI-4: Lotus Evija |
| 6.3.14. | Motion Applied (Formerly McLaren Applied) IPG5-x |
| 6.4. | Automotive OEMs |
| 6.4.1. | Hyundai Diversifies SiC Supply for Best-Selling 800V E-GMP Platform |
| 6.4.2. | GM From Bolt & Volt to Ultium |
| 6.4.3. | Volvo Heavy Duty SiC Inverter |
| 6.4.4. | Mercedes In House Development |
| 7. | POWER ELECTRONICS PACKAGES: EV USE-CASES |
| 7.1. | Toyota Prius 2004-2010 |
| 7.2. | 2008 Lexus |
| 7.3. | Honda Accord 2014 |
| 7.4. | Toyota Prius 2010-2015 |
| 7.5. | Nissan Leaf 2012 |
| 7.6. | Honda Fit (by Mitsubishi) |
| 7.7. | Toyota Prius 2016 Onwards |
| 7.8. | Cadillac 2016 (by Hitachi) |
| 7.9. | Chevrolet Volt 2016 (by Delphi) |
| 7.10. | BMW i3 (by Infineon) |
| 7.11. | JAC iEV4 |
| 7.12. | Chinese NEV Uses Infineon |
| 7.13. | Huachen Xinri |
| 7.14. | Tesla Model X: Infineon IGBTs before SiC |
| 7.15. | 800V Si IGBT IGBT Choices |
| 7.16. | Porsche Taycan |
| 7.17. | Nissan Ariya 2021 |
| 7.18. | Jaguar I-PACE |
| 7.19. | Jaguar I-PACE Power Module and Cooling |
| 7.20. | Wuling Hongguang Mini EV |
| 7.21. | Danfoss |
| 7.22. | Rivian R1T |
| 7.23. | Lexus RZ |
| 7.24. | Ford F-150 Lightning |
| 7.25. | BYD Atto 3 (2022): 8-in-1 Powertrain |
| 7.26. | BMW iX3 |
| 7.27. | Tesla Cybertruck |
| 7.28. | STMicro |
| 8. | THERMAL MANAGEMENT FOR EV POWER ELECTRONICS |
| 8.1. | Introduction |
| 8.1.1. | Thermal Management Strategies in Power Electronics (1) |
| 8.1.2. | Thermal Management Strategies in Power Electronics (2) |
| 8.1.3. | Transistor History & MOSFET Overview - How Does it Affect Thermal Management |
| 8.1.4. | Summary of Cooling Approaches - (1) |
| 8.1.5. | Summary of Cooling Approaches - (2) |
| 8.2. | TIM1 and TIM2 in power electrics |
| 8.2.1. | Where are TIMs used in EV Power Electronics |
| 8.2.2. | TIM1 in Flip Chip Packaging |
| 8.2.3. | Solders as TIM1 |
| 8.2.4. | Solder Options and Current Die Attach |
| 8.2.5. | Die-Attach Solution - Thermal Conductivity Comparison |
| 8.2.6. | Trend Towards Sintering |
| 8.2.7. | Silver Sintering Paste |
| 8.2.8. | Suppliers of metal sintering pastes |
| 8.2.9. | Properties and performance of solder alloys and sintered pastes |
| 8.2.10. | TIM2 - IDTechEx's Analysis on Promising TIM2 |
| 8.2.11. | Yearly Market Size of TIMs Forecast (US$ Millions): 2024-2034 |
| 8.3. | Liquid cooling - single and double sided |
| 8.3.1. | Single side, dual side, in-direct, and direct cooling |
| 8.3.2. | Key Summary of Single-Sided Cooling |
| 8.3.3. | Benefits and Drawbacks of Single-Sided Cooling |
| 8.3.4. | TIM2 Area Largely Similar for Single-Sided Cooling |
| 8.3.5. | onsemi - EliteSiC Power Module |
| 8.3.6. | ST Microelectronics - Tesla Model 3 |
| 8.3.7. | Key Summary of Double-Sided Cooling (DSC) |
| 8.3.8. | Double-Sided Cooling Introduction |
| 8.3.9. | Double-Sided cooling examples |
| 8.3.10. | The Need for Double-Sided Cooling in Power Modules |
| 8.3.11. | Infineon's HybridPACK DSC |
| 8.3.12. | Inner Structure of HybridPACK DSC |
| 8.3.13. | onsemi - VE-Trac Family modules |
| 8.3.14. | CRRC |
| 8.3.15. | Hitachi Inverter - Double-Sided Cooling |
| 8.3.16. | BYD 1500V SiC - Double-Sided Ag Sintering |
| 8.3.17. | Trend Towards Double-Sided Cooling for Automotive Applications |
| 8.3.18. | Transition to Double-Sided Liquid Cooling |
| 8.3.19. | Market Share of Single and Double-Sided Cooling: 2024-2034 |
| 9. | POWER ELECTRONICS FOR HEAVY DUTY VEHICLES |
| 9.1.1. | Trucks are Capital Goods |
| 9.1.2. | Differences Between Power Electronics for Passenger Vehicles and Heavy-Duty Vehicles |
| 9.1.3. | Torque vs Peak Power for Heavy-Duty BEVs |
| 9.1.4. | PowerizeD |
| 9.1.5. | High Voltage Powertrains for Heavy Duty Trucks |
| 9.1.6. | Ways to have 400V DC Charging Compatibility |
| 9.1.7. | MCS Specifications and Comparison |
| 9.1.8. | 800V Makes More Sense for Heavy Duty Trucks |
| 9.1.9. | Power Conversion for Low Power Applications |
| 9.1.10. | Onboard Chargers for Electric Trucks |
| 9.1.11. | Inverters for Heavy-Duty Vehicles |
| 9.2. | Heavy-Duty BEV Suppliers |
| 9.2.1. | Hitachi Roadpak |
| 9.2.2. | BAE Systems |
| 9.2.3. | BAE and Eaton Commercial Demonstrator 2024 |
| 9.2.4. | Accelera by Cummins |
| 9.2.5. | Accelera (Cummins) |
| 10. | FORECASTS |
| 10.1. | Exponential Growth in Regional EV Markets |
| 10.2. | Methodology |
| 10.3. | Inverters per Car Forecast 2022-2036 |
| 10.4. | Inverters per Car: Regional |
| 10.5. | Multiple Motors / Inverters per Vehicle |
| 10.6. | Inverter Forecast 2023-2036 (GW): GaN 600V, Si IGBT 600V, SiC MOSFET 600V, 1200V |
| 10.7. | Inverter Market Share 2023-2036: GaN 600V, Si IGBT 600V, SiC MOSFET 600V, 1200V |
| 10.8. | Inverter Liquid Cooling Strategy Forecast (units): 2015-2036 |
| 10.9. | Discretes vs Power Modules Forecast for Inverters 2023-2036 |
| 10.10. | OBC Forecast: Si, SiC, GaN 2023-2036 (GW) |
| 10.11. | DC-DC Converter Forecast: Si, SiC, GaN 2023-2036 (GW) |
| 10.12. | Inverter, OBC, DC-DC Converter Forecast 2023-2036 (GW) |
| 10.13. | Inverter, OBC, DC-DC Converter Unit Sales Forecast 2023-2036 |
| 10.14. | Inverter, OBC, DC-DC Converter Forecast 2023-2036 (US$ billion) |
| 10.15. | OBC by Level: 4kW, 6-11.5kW, 16-22kW 2020-2036 |
| 10.16. | Inverter, OBC & Converter, Si, SiC, GaN Cost Assumptions (US$ per kW) |
| 11. | PROFILES |
| 11.1. | Advanced Electric Machines Ltd |
| 11.2. | Arteco: EV-Specific Water-Glycol Coolants |
| 11.3. | BMW |
| 11.4. | BYD Auto |
| 11.5. | Diamond Foundry: Electric Vehicle Inverters |
| 11.6. | Dynex Semiconductor (CRRC): EV Power Electronics |
| 11.7. | Efficient Power Conversion: GaN FETs |
| 11.8. | Efficient Power Conversion: GaN in Automotive |
| 11.9. | Elaphe: In-wheel Motors to Increase Drive Cycle Efficiency |
| 11.10. | Equipmake: Electric Motors and Power Electronics |
| 11.11. | GaN Systems |
| 11.12. | General Motors (2020) |
| 11.13. | Heraeus: Solutions for EV Power Electronics |
| 11.14. | Hyundai: E-GMP 800V Platform Success |
| 11.15. | Infineon: 750V SiC MOSFETs for Onboard Chargers |
| 11.16. | Infineon: Automotive Power Electronics |
| 11.17. | Infineon: Expanding SiC OEM Partnerships |
| 11.18. | Integral e-Drive |
| 11.19. | Lotus |
| 11.20. | Lucid Motors |
| 11.21. | Magna International |
| 11.22. | McLaren Automotive |
| 11.23. | Nexperia: GaN for EV Power Electronics |
| 11.24. | NXP Semiconductors |
| 11.25. | QPT: MHz Switching, Active Cooling GaN |
| 11.26. | Rivian: Electric Passenger Trucks |
| 11.27. | ROHM Semiconductor: Supplying Lucid Motors |
| 11.28. | STMicroelectronics: SiC Advantages and Supply Chain |
| 11.29. | Tesla (2019 Update) |
| 11.30. | Transphorm |
| 11.31. | Valeo (48V Powertrain) |
| 11.32. | Wolfspeed |
| 11.33. | Wolfspeed: Major SiC Supply Deals |
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Power Electronics for Electric Vehicles 2026-2036: Technologies, Markets, and Forecasts
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The automotive power electronics market will exceed US$42 billion by 2036.
报告统计信息
| 幻灯片 | 345 |
|---|---|
| Companies | 33 |
| 预测 | 2036 |
| 已发表 | Oct 2025 |
预览内容
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