Tuesday, 03 Apr 2012
Wednesday, 04 Apr 2012
Wednesday April 04, 2012
3D Printing (15:35 - 16:40)15:35 - 16:00 "Stability and Reliability of Organic Field-Effect Transistors"
• A bilayer gate dielectric leads to top-gate organic field-effect transistors that are air stable, can be operated under water and exposed to an oxygen plasma without significant changes of the transistor performance.
• Engineering compensating mechanisms into the transistor geometry leads to organic field-effect transistors with remarkable operational stability.
• Systematic reliability studies conducted by exposing top-gate organic field-effect transistors to oxygen and humid atmospheres, and its effects on device performance, are discussed.
• Optimization of the conditions for the fabrication of top-gate organic field-effect transistors with charge mobility values up to 2.8 cm2/Vs are described.
16:00 Track 4 Ends