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Conference Agenda

Day 1: Wednesday November 30
7.30am - Registration
- outside Exhibit Halls A/B

8.30am - 6.00pm - Conference
10.00am - 7.00pm - Tradeshow
    
Day 2: Thursday December 1
7.30am - Registration
- outside Exhibit Halls A/B

8.30am - 6.00pm - Conference
10.00am - 4.30pm - Tradeshow
LOCATION

Conference Rooms:
Grand Ballroom, Santa Clara Convention Center
Tradeshow & Refreshments :
Exhibit Halls A/B

Wednesday, 30 Nov 2011

 Keynote Presentations
10:25Break
11:30Boeing
11:05U.S. Army
11:55E Ink Holdings
09:10MWV Packaging
08:45Procter & Gamble
10:00T-Ink Inc
12:20OSRAM Sylvania
09:35The Marketing Store
08:30IDTechEx
12:45LUNCH

Track 1

 Brand Enhancements for Consumer Goods
14:25University of California
14:50DECATHLON SA
15:40Break
16:45plastic electronic GmbH
15:15DHL
 Sensor Functionality Integration
17:10University of California
17:35University of Cape Town
18:00Track 1 Ends

Track 2

 Product Enhancement for Consumer Electronics
14:25Artificial Muscle Inc
15:15Polymer Vision
14:50Plastic Logic GmbH
 Touchscreens
15:40Peratech Ltd
16:05Break
16:45PolyIC GmbH & Co KG
 Inorganic Thin Film Transistors
17:35Hewlett-Packard
17:10University of Cambridge
18:00Track 2 Ends

Track 3

 NFC & RFID
14:25Sunchon National University
 Printed Electronics in Asia
15:15Polyera
14:50Hitachi Chemical Ltd
 Breakthrough With Printed Logic
16:05Break
17:10NanoGram Corp
16:45PARC
15:40PragmatIC Printing Ltd
 Lighting
17:35Nth Degree Technologies
18:00Track 3 Ends

Thursday, 01 Dec 2011

Track 1

 OLED Display Breakthrough
08:30Heraeus PM
09:20University of Toronto
10:10Break
10:50Blue Nano Inc
08:55Panasonic Electric Works Co. Ltd.
09:45Plextronics Inc
 Quantum Display
11:40QD Vision
11:15Opalux Incorporated
 Graphene & Carbon Nanotubes
12:05UCLA
12:25LUNCH
15:35Northern Illinois University
13:55Brewer Science
14:45Chasm Technologies
15:10Applied Nanotech
14:20Vorbeck Materials
16:00Break
 Closing Keynotes
17:30IDTechEx
16:40The Paper Battery Company Inc
17:05Cambrios Technologies Corporation
17:45Day 2 Track 1 Ends

Track 2

 Creating New Products
09:20Soligie
09:45Thin Film Electronics
08:55GSI Technologies
08:30Enfucell Ltd
10:10Break
 Paper Electronics
11:15MIT
10:50De La Rue Group R&D
 Printing Invisibility
11:40Acreo AB
12:05City University of Hong Kong
12:25LUNCH
 Land, Sea, Air Mobility
13:55Planar Energy Devices Inc
14:20PolyPlus Battery Company
 Energy Storage: Batteries, Supercapacitors and Beyond
14:45Infinite Power Solutions
15:10Stanford University
15:35Stevens Institute of Technology
16:00Day 2 Track 2 Ends

Track 3

 The Analyst View
08:55Navigant Consulting
08:30IDTechEx
 Concentrator PV
09:45Skyline Solar
09:20Boeing Spectrolab
10:10Break
 Inorganic PV
10:50Vitriflex
 DSSC/OPV
11:15Dyesol Inc
11:40Solarmer Energy Inc
 Manufacturing PV
12:25LUNCH
14:20PixDro
12:05Integration Technology
13:55CSIRO
 Barriers & Substrates
15:35Evonik Degussa GmbH
15:10Henkel
14:45Tera-Barrier Films Pte Ltd
16:00Day 2 Track 3 Ends

Track 4

 Fine Patterning for Transparent Conductors: Replacing ITO?
08:30KAIST
09:20UCLA
08:55Toppan Forms
Osaka University
 Printing as Part of a Volume Manufacturing Process
10:10Break
12:05Aixtron SE
11:40Northfield Automation Systems Inc
11:15Ohio Gravure Technologies Inc
09:45Nano Forge
10:50NovaCentrix
12:25LUNCH
 NanoMetal Ink Advancements
14:20Tokusen USA Inc.
13:55Intrinsiq Materials
 3D Printing
15:10Georgia Institute of Technology
14:45Optomec Inc
15:35End User Forum
16:00Day 2 Track 4 Ends
 
 

Wednesday November 30, 2011

Inorganic Thin Film Transistors (17:10 - 18:00)

17:10 - 17:35 "High Performance Metal Oxides Deposited By High Target Utilisation Sputtering for Transparent Electronics"
  • A novel, high target utilisation sputtering (HiTUS) system has been used to produce a diverse range of metal oxide materials for transparent electronics including dielectrics and both p- and n-type semiconductors
  • The HiTUS system gives greater control of material properties compared with magnetron sputtering
  • This improved control is exemplified by the deposition of a new phase of amorphous hafnium oxide - cubic-like amorphous hafnium oxide - which has a fully amorphous structure and a dielectric constant of 30, and is a significant improvement beyond the state-of-the-art
  • It will be demonstrated that these materials can be incorporated into both thin film transistors and solar cells
 
17:35 - 18:00 "Fabrication of Metal Oxide Thin Film Electronics Using Roll-to-Roll Imprint Lithography"
  • HP developed a self-aligned, roll-to-roll imprint lithographic process (SAIL)
  • SAIL extended to thin-film metal oxide electronics
  • Fabricated higher performance transistors and arrays
 
18:00 Track 2 Ends