Power Electronics Market 2026-2036: Electric Vehicles, Data Centers, and Renewables
Ten-year power electronics market forecasts, including forecasts for electric vehicles, data centers, and renewable energy. Detailed comparison of silicon, silicon carbide, gallium nitride, and ultra-wide bandgap semiconductors.
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The demand for power electronics is expected to grow rapidly over the next ten years, driven largely by demand in electric vehicles (EVs) and data centers. IDTechEx expects the power electronics market to grow to US$65.2 billion by 2036, representing a 10% CAGR over the forecasting period.
Across the power electronics market, OEMs are pushing for increased efficiency, consistent reliability, and greater power density from their power electronics components. Increasingly, this means turning to wide bandgap (WBG) semiconductors: silicon carbide (SiC) and gallium nitride (GaN). These technologies have the potential to revolutionize the power electronics industry, enabling high-voltage operation and new power architectures, such as the 800V e-powertrain in electric vehicles and 800VDC data centers.
IDTechEx's report "Power Electronics Market 2026-2036: Electric Vehicles, Data Centers, and Renewables" benchmarks and compares silicon, silicon carbide, gallium nitride and ultra-wide bandgap (UWBG) semiconductors diamond, gallium oxide (Ga2O3) and aluminum nitride. The report considers the merits of each semiconductor material across the EV, data center, and renewables industries, as well as barriers to adoption and technological innovations. The report includes granular forecasts detailing power (GW) and market size (US$) segmented by application (electric vehicles, data centers, and wind energy), and by semiconductor technology (Si, SiC, GaN).
SiC will take the majority share of the power electronics industry by 2036, with significant uptake of GaN power electronics over the next ten years.
Semiconductor materials and manufacture trends
Wide bandgap semiconductor technology has commercialized rapidly over the past ten years. SiC and GaN have moved from niche applications into the mainstream. These wide bandgap semiconductor materials are critical for the next generation of innovations in power electronics, enabling smaller circuits and higher power.
The power electronics supply chain is complex, with a combination of highly-diversified tier 1 manufacturers and single-material wafer fabs. The silicon carbide market has undergone a period of transformation in recent years, catalyzed by aggressive competition between Chinese SiC manufacturers. The price of SiC wafers has decreased dramatically as a result, and SiC oversupply challenges arose. This report includes detailed insights from leading Chinese SiC manufacturers and maps them onto the overall SiC supply chain.
Gallium nitride is also expected to develop significantly over the next ten years, with key events such as the commercialization of 300mm GaN-on-Si, and the development of vertical GaN (vGaN) technology for high-voltage GaN applications. Over the forecasting period, IDTechEx expects global GaN production volume to increase and GaN costs to decrease, with GaN wafer prices forecast to approach those of silicon. With the application areas available to GaN and SiC increasingly overlapping, IDTechEx anticipates that the GaN power electronics market will grow significantly in the forecasting period.
Short-, medium-, and long-term roadmap of technology innovations in semiconductor materials for Si, WBG and UWBG, as well as innovations in electric vehicles, data centers, and renewable energy.
Unique experience and perspective
IDTechEx is uniquely well-positioned to cover this topic, covering emerging technology markets, specializing in semiconductor materials and electric vehicles. IDTechEx's broad EV portfolio includes batteries, thermal management, e-motors and power electronics, and builds upon over a decade of experience covering the industry. Moreover, IDTechEx's latest research monitors the rapidly evolving data center industry alongside continual coverage of the renewable energy sector. IDTechEx has the depth and breadth of knowledge to capture the power electronics industry, and distil key insights on the power electronics market and key semiconductor materials.
Key Aspects
This report provides critical market intelligence on power semiconductor materials and key power electronics applications. This includes:
A review of power electronics materials and manufacture:
- Benchmarking and comparisons of silicon, silicon carbide, gallium nitride, and ultra-wide bandgap semiconductors diamond, gallium oxide and aluminum nitride.
- Insights on wide bandgap manufacture, including developments in wafer diameter and device architecture.
- Comparison of wafer fabrication processes, including those for ultra-wide bandgap semiconductors.
Latest developments in power electronics for electric vehicles, data centers, and renewables:
- Key insights from the latest AI data center power electronics developments, including wide bandgap, HVDC, and managing volatile AI training workloads.
- Critical evaluation of wide bandgap semiconductor adoption across the EV e-powertrain.
- Discussion of the relationship between EV power electronics and data center power electronics, and evaluation of cross-industry power electronics development.
- Assessment of wind power converter architectures (DFIG and PMSG) and silicon carbide uptake.
Comprehensive market analysis:
- Detailed insights on the global SiC market, acquired through direct interviews with leading Chinese SiC suppliers.
- Over 25 company profiles
- Breakdown of the full power electronics supply chain.
- Granular power electronics market forecasting from 2026-2036, including segmentation by power electronics material and by key application area.
| Report Metrics | Details |
|---|---|
| CAGR | The global market for power electronics will reach US$65.2 billion by 2036. This represents a CAGR of 10% over the 2026-2036 period. |
| Forecast Period | 2026 - 2036 |
| Forecast Units | US$, GW |
| Regions Covered | Worldwide |
| Segments Covered | Electric vehicles, data centers, wind energy, silicon, silicon carbide, gallium nitride. |
Analyst access from IDTechEx
All report purchases include up to 30 minutes telephone time with an expert analyst who will help you link key findings in the report to the business issues you're addressing. This needs to be used within three months of purchasing the report.
Further information
If you have any questions about this report, please do not hesitate to contact our report team at research@IDTechEx.com or call one of our sales managers:
ASIA: +44 1223 810259
| 1. | EXECUTIVE SUMMARY |
| 1.1. | Technical primer: What is power electronics? |
| 1.2. | Important properties of a transistor in power electronics |
| 1.3. | Comparison of semiconductor material properties |
| 1.4. | Comparison of Si to wide bandgap semiconductors SiC and GaN |
| 1.5. | Key trends in power electronics for EVs, data centers, and renewables |
| 1.6. | Manufacturing for SiC and GaN refined; UWBG manufacture still active R&D |
| 1.7. | The power electronics value chain |
| 1.8. | Different EV PoE component requirements affect the materials used |
| 1.9. | IDTechEx inverter outlook on power density |
| 1.10. | 800V EV platforms improves charging speeds and is supported by SiC |
| 1.11. | AI pushes data centers towards higher power density, not just efficiency |
| 1.12. | 400VAC → 800VDC data centers: driven by power density, influenced by EVs |
| 1.13. | Key changes in the 800VDC data center architecture |
| 1.14. | NVIDIA partners with numerous WBG Tier 1s for new data centers |
| 1.15. | Dealing with "spiky" AI training loads requires cross-industry collaboration |
| 1.16. | Solar and wind energy are significant growth areas led by China |
| 1.17. | More powerful wind turbines necessitate a change in power architecture |
| 1.18. | Significant mergers, acquisitions, and joint ventures in solar and wind |
| 1.19. | Overall 10% CAGR in PoE market, with strongest growth in GaN and SiC. |
| 1.20. | EV continues to take majority of power electronics market share |
| 1.21. | Strong SiC growth and rapid GaN commercialization expected 2026-2036 |
| 1.22. | Analyst opinions |
| 1.23. | Access more with an IDTechEx subscription |
| 2. | INTRODUCTION TO POWER ELECTRONICS |
| 2.1. | Technical primer: What is power electronics? |
| 2.2. | Overarching goals of power electronics development |
| 2.3. | Bare dies, discretes, and modules |
| 2.4. | Silicon in power electronics |
| 2.5. | Silicon carbide (SiC) and gallium nitride (GaN) in power electronics |
| 2.6. | Electric vehicle applications: Inverter |
| 2.7. | Electric vehicle applications: On-board charger |
| 2.8. | Electric vehicle applications: DC-DC converter |
| 2.9. | Data center applications |
| 2.10. | Applications in wind energy |
| 2.11. | Power electronics are critical for grid-level stability |
| 3. | SEMICONDUCTORS FOR POWER ELECTRONICS |
| 3.1. | Silicon (Si) |
| 3.1.1. | Silicon has been the semiconductor of choice for over fifty years |
| 3.1.2. | Silicon devices have been refined over decades |
| 3.1.3. | Silicon has decreased in price dramatically over fifty years and is by far the cheapest option |
| 3.1.4. | Silicon is fundamentally limited in next generation power electronics applications |
| 3.1.5. | WBGs will complement Si where voltages/switching frequencies are limiting |
| 3.2. | WBG semiconductors: Silicon carbide (SiC) and gallium nitride (GaN) |
| 3.2.1. | SiC can support considerably higher voltages than silicon |
| 3.2.2. | SiC devices can handle higher voltages with a thinner drift layer |
| 3.2.3. | The switch to SiC is seen in many power electronics applications |
| 3.2.4. | GaN has an even higher bandgap than SiC, and a very high electron mobility |
| 3.2.5. | Bulk GaN can reach high voltages, but is prohibitively expensive |
| 3.2.6. | Both SiC and GaN reduce switching losses compared to Si IGBTs |
| 3.2.7. | SiC & GaN have substantial room for improvement |
| 3.2.8. | SiC and GaN are likely to complement Si in various different applications |
| 3.2.9. | Different figure of merit (FoM) scores show WBG material dominance over Si |
| 3.2.10. | Si IGBT and SiC MOSFET Price Comparison |
| 3.2.11. | SiC and GaN Device Cost Comparison |
| 3.2.12. | Why SiC "won" over GaN, and why this could change in the next ten years |
| 3.2.13. | SWOT analysis: SiC as a WBG semiconductor |
| 3.2.14. | SWOT analysis: GaN as a WBG semiconductor |
| 3.3. | Ultra-wide bandgap semiconductors: Ga2O3, diamond, and AlN |
| 3.3.1. | What are ultra-wide bandgap (UWBG) semiconductors? |
| 3.3.2. | UWBG semiconductors could disrupt many PoE applications |
| 3.3.3. | There is competition between three different key UWBG materials |
| 3.3.4. | AlN and Al(Ga)N |
| 3.3.5. | Gallium oxide (Ga2O3) |
| 3.3.6. | Diamond |
| 3.3.7. | Comparison of UWBG semiconductors to existing materials |
| 3.3.8. | Some larger players are involved in wafer growth, but applications are largely dominated by startups and spinouts |
| 3.3.9. | The defense sector is investing in UWBG material and applications research |
| 3.3.10. | UWBGs have huge disruptive potential, but are not yet commercial |
| 3.3.11. | UWBG wafer costs are coming down, but are still prohibitively expensive |
| 3.3.12. | UWBGs must overcome key challenges before commercialization |
| 3.3.13. | Strong push towards UWBG research in academia |
| 3.3.14. | REWIRE: A UK-based innovation and knowledge center (IKC) |
| 3.3.15. | ATECOM Technology showcase key UWBG materials and devices |
| 3.3.16. | JBDianet is hopeful for CVD diamond in aerospace and defense applications |
| 3.3.17. | Asahi Diamond looks towards UWBG and diamond semiconductors |
| 3.3.18. | SWOT analysis: Diamond as an UWBG semiconductor |
| 3.3.19. | SWOT analysis: Ga2O3 as an UWBG semiconductor |
| 4. | SEMICONDUCTOR MANUFACTURE |
| 4.1. | The semiconductor value chain |
| 4.1.1. | Overview: From raw materials to final die |
| 4.1.2. | SiC Value Chain with Key Players |
| 4.1.3. | GaN Value Chain with Key Players |
| 4.1.4. | Market share of power electronics suppliers |
| 4.1.5. | Automotive GaN device suppliers are growing |
| 4.2. | Bulk substrates, epitaxy, and growth methods |
| 4.2.1. | Si IGBT production: Raw materials to end-product |
| 4.2.2. | SiC MOSFET Production: Raw materials to end-product |
| 4.2.3. | SiC-specific equipment (1) |
| 4.2.4. | SiC-specific equipment (2) |
| 4.2.5. | Energy demand of processes: Si vs GaN |
| 4.2.6. | Many scientific and economic considerations feed into the "perfect" epitaxy |
| 4.2.7. | Heteroepitaxy and homoepitaxy both come with advantages and drawbacks |
| 4.2.8. | Which substrate will prevail for GaN? |
| 4.2.9. | Epitaxy methods: MOCVD - a balance of speed and precision |
| 4.2.10. | Epitaxy methods: HVPE - for fast template and substrate growth |
| 4.2.11. | Epitaxy methods: MBE - slow, but highly accurate |
| 4.2.12. | Epitaxy methods: MPCVD - the standard for electrical-grade diamond |
| 4.2.13. | Epitaxy methods: Mist-CVD - a potential low-cost route to Ga2O3 films |
| 4.2.14. | Element 3-5 GmbH's next-level epitaxy (NLE) promises 10x higher throughput |
| 4.2.15. | Element 3-5's NLE could prove highly disruptive to epitaxy if successful |
| 4.2.16. | Several challenges must be addressed before NLE can take off |
| 4.2.17. | Commercialization is limited by a trade-off between purity and growth-rate |
| 4.3. | Recent trends in SiC and GaN manufacture |
| 4.3.1. | The 150mm to 200mm transition in SiC is associated with cost advantages |
| 4.3.2. | 200mm Wafer Die Count Advantage |
| 4.3.3. | 2025: The transition to 8-inch SiC wafers continues to accelerate |
| 4.3.4. | 200mm SiC wafer production worldwide |
| 4.3.5. | Strong Chinese competition drove down SiC prices, while the West struggled to keep up |
| 4.3.6. | Many power semiconductor suppliers are vertically integrated, but still rely on China to top up supply |
| 4.3.7. | Synlight supplies many leading tier 1s and is readying itself for 300mm SiC |
| 4.3.8. | TYSiC is China's largest, and the world's 3rd largest, SiC epitaxy supplier |
| 4.3.9. | CrystalYond is involved in the R&D for 300mm SiC |
| 4.3.10. | Atecom includes SiC among its highly diversified material supply |
| 4.3.11. | Jhonghuan adds SiC (and GaN) to diversify its portfolio beyond just silicon |
| 4.3.12. | 300mm SiC is here, but costs are too high and processing is not ready |
| 4.3.13. | Bosch commits to SiC roadmap using only 200mm SiC wafers |
| 4.3.14. | Bosch bets on trench design for easy transition to advanced architectures |
| 4.3.15. | Denso: Research and development for faster SiC crystal growth |
| 4.3.16. | Siltectra: Cold split technology |
| 4.3.17. | SmartSiC Technology from SOITEC |
| 4.3.18. | Summary of SmartSiC Advantages |
| 4.3.19. | Sumitomo Metal Mining: SiCkrest |
| 4.3.20. | Sumitomo Metal Mining: SiCkrest (2) |
| 4.3.21. | Trench vs planar |
| 4.3.22. | Extensive collaboration to commercialize 300mm GaN-on-Si |
| 4.3.23. | Infineon is working independently to establish leadership in 300mm GaN |
| 4.3.24. | Power Integrations develops 1250V and 1700V PowiGaN cascode devices |
| 4.3.25. | Startups pioneering vertical GaN FinFETs on engineered substrates |
| 4.3.26. | Onsemi announces research on vertical GaN devices |
| 4.3.27. | Qromis engineered substrate for GaN power: QST |
| 4.3.28. | Why vertical GaN devices could disrupt the power electronics market |
| 5. | POWER ELECTRONICS IN EVS |
| 5.1. | Introduction to electric vehicles |
| 5.1.1. | Electric vehicle definitions |
| 5.1.2. | Electric vehicles: Typical specs |
| 5.1.3. | EU targets drive down emissions |
| 5.1.4. | Powertrain tailpipe emissions comparison |
| 5.2. | Overview of power electronics in electric vehicles |
| 5.2.1. | Power electronics use in electric vehicles |
| 5.2.2. | Inverter, OBC, DC-DC converter |
| 5.2.3. | Limitations of SiC power devices |
| 5.2.4. | GaN to become preferred OBC technology |
| 5.3. | Onboard chargers |
| 5.3.1. | Current landscape for OBCs |
| 5.3.2. | How GaN is implemented into an OBC |
| 5.3.3. | GaN Systems' onboard charger |
| 5.3.4. | Cost and volume reductions of a GaN OBC |
| 5.3.5. | Ricardo: GaN in the automotive market |
| 5.3.6. | Progress of different applications of GaN |
| 5.4. | Traction inverters |
| 5.4.1. | Inverter overview |
| 5.4.2. | Traditional EV inverter |
| 5.4.3. | Discretes and modules |
| 5.4.4. | Inverter components and cost |
| 5.4.5. | Current inverter landscape |
| 5.4.6. | GaN vs SiC potential in the inverter |
| 5.4.7. | Electric vehicle inverter benchmarking |
| 5.4.8. | SiC impact on the inverter package |
| 5.4.9. | IDTechEx inverter predictions on power density |
| 5.5. | Trends impacting EV power electronics |
| 5.5.1. | Improving the efficiency of power electronics |
| 5.5.2. | Efficiency and thermal gains, 800V |
| 5.5.3. | Examples of SiC in the automotive industry |
| 5.5.4. | SiC drives 800V platforms |
| 5.5.5. | 800V charging speeds |
| 5.5.6. | 800V platforms SiC and Si IGBT inverters |
| 5.5.7. | Hybrid switch inverters |
| 5.5.8. | Hybrid switch inverters |
| 5.5.9. | Integration of power electronics |
| 5.5.10. | Traction integrated onboard charger (iOBC) |
| 5.5.11. | BorgWarner: Combined inverter and DC-DC converter |
| 5.5.12. | SiC MOSFET vs Si IGBT: Overall vehicle cost |
| 5.5.13. | SiC MOSFET usage by automotive OEMs and suppliers - leading OEMs |
| 5.5.14. | Si IGBT suppliers to leading OEMs |
| 5.5.15. | Electric vehicle power electronics forecast by semiconductor material |
| 5.5.16. | EV power electronics market forecast by semiconductor and application |
| 6. | POWER ELECTRONICS IN DATA CENTERS |
| 6.1. | Introduction to data centers |
| 6.1.1. | What is a data center? |
| 6.1.2. | Different types of data centers |
| 6.1.3. | On-site data centers are losing popularity, hyperscalers and edge take over |
| 6.1.4. | Data centers consume a significant and growing portion of global energy |
| 6.1.5. | The USA leads significantly on data centers, followed by Germany and the UK |
| 6.1.6. | Data center efficiency has improved since 2007, but has stalled since 2018 |
| 6.1.7. | Future data center improvements involve power density, not just efficiency |
| 6.1.8. | Summary of colocation and hyperscaler providers, and data center providers |
| 6.2. | Overview of power electronics in data centers |
| 6.2.1. | Some notes on data center architecture |
| 6.2.2. | Power electronics play a critical role in data center operation. |
| 6.2.3. | Incumbent rack architecture 1: "One PSU per shelf" |
| 6.2.4. | Incumbent rack architecture 2: "Central PSU shelf and 48V bus" |
| 6.3. | Power factor correction (PFC) and the power supply unit (PSU) |
| 6.3.1. | Power supply units are critical for data center efficiency and power density |
| 6.3.2. | Power factor correction is a crucial use of power electronics |
| 6.3.3. | The "80 Plus" program sets the global standard for PSU efficiency |
| 6.3.4. | Other programs incentivize or mandate efficiency requirements globally |
| 6.3.5. | The LLC converter steps voltage down to the server level |
| 6.3.6. | Adoption of SiC and GaN in the PSU |
| 6.3.7. | Timeline of WBG adoption in PSUs |
| 6.4. | AI data centers and 800VDC |
| 6.4.1. | Computational costs of AI are huge |
| 6.4.2. | Power and cooling are now at the fore of AI data center considerations |
| 6.4.3. | AI is driving the push for increased power density, rather than just efficiency |
| 6.4.4. | Nvidia's GB200 NVL72 and GB300 NVL72 |
| 6.4.5. | Existing data center architecture cannot support future server generations (1) |
| 6.4.6. | Existing data center architecture cannot support future server generations (2) |
| 6.4.7. | NVIDIA's redistribution of power |
| 6.4.8. | Key changes in the 800VDC data center architecture |
| 6.4.9. | Rack-level 800VDC and material reductions |
| 6.4.10. | EV charging architecture influences 800VDC data center power architecture (1) |
| 6.4.11. | EV charging architecture influences 800VDC data center power architecture (2) |
| 6.4.12. | NVIDIA's Kyber Architecture will begin rollout in 2027 |
| 6.4.13. | Long-term data center power architecture simplified by SSTs |
| 6.4.14. | Two different 800V rack architectures increase flexibility within existing DCs |
| 6.4.15. | 800VDC can be implemented gradually and retrofitted |
| 6.4.16. | NVIDIA partners with numerous WBG Tier 1s for new data centers |
| 6.4.17. | Navitas: Combined GeneSiC and GaNSafe PSU |
| 6.4.18. | Infineon: 12kW high power density PSU with energy buffer for transient loads |
| 6.4.19. | Onsemi: 12kW PSU for AI and cloud features SiC cascode JFETs |
| 6.4.20. | STM: LLC converter for 800VDC data centers with 2600W/in3 efficiency |
| 6.4.21. | Innoscience commits to all-GaN technology for power conversion |
| 6.4.22. | Power Integrations 1250V/1700V GaN technology maximizes efficiency |
| 6.4.23. | Summary of next-generation 8-12kW PSUs |
| 6.4.24. | Does AI really need this much power? |
| 6.4.25. | Why not go to higher voltages? |
| 6.4.26. | Data center power electronics forecast by semiconductor material |
| 6.4.27. | Data center 800VDC (HVDC) market forecast |
| 6.5. | "Spiky" AI training loads |
| 6.5.1. | Synchronized GPUs introduce new challenges in workload management |
| 6.5.2. | Fluctuating AI workloads stress compute equipment and affect the grid |
| 6.5.3. | Software-only mitigation |
| 6.5.4. | GPU power smoothing |
| 6.5.5. | Challenges and limitations of GPU power smoothing |
| 6.5.6. | Rack-level energy storage |
| 6.5.7. | Summary of all three solutions |
| 6.5.8. | Power stabilization requires all three solutions and industry-wide cooperation |
| 7. | POWER ELECTRONICS IN RENEWABLES |
| 7.1. | Introduction to renewables |
| 7.1.1. | What is renewable energy? |
| 7.1.2. | Wind and solar have grown significantly in the past ten years |
| 7.1.3. | Wind and solar prices have dropped significantly in recent years |
| 7.1.4. | Geographical breakdown of wind energy generation (2015-2024) |
| 7.1.5. | Geographical breakdown of solar energy generation (2015-2024) |
| 7.1.6. | Onshore wind dominates, both in rollout and cost |
| 7.1.7. | Different types of solar power |
| 7.1.8. | Solar energy power electronics value chain |
| 7.1.9. | Wind energy power electronics value chain |
| 7.1.10. | Significant mergers, acquisitions, and joint ventures in solar and wind |
| 7.2. | Power electronics in wind energy |
| 7.2.1. | Forecast wind turbine capacity growth from 2026 to 2036 |
| 7.2.2. | The wind turbine nacelle |
| 7.2.3. | Wind speed is not constant, but the AC output must be |
| 7.2.4. | Fixed-speed wind turbines (mostly legacy) |
| 7.2.5. | Doubly-fed induction generator (DFIG) |
| 7.2.6. | Permanent magnet synchronous generators and full power converters |
| 7.2.7. | Comparison of DFIG and full conversion |
| 7.2.8. | Comparison of DFIG and PMSG in modern turbines |
| 7.2.9. | PMSG and full conversion dominates at higher power ratings |
| 7.2.10. | PMSG expected to increase dominance from 2026-36 |
| 7.2.11. | Forecast of new turbines introduced with PMSG vs. DFIG 2026-2036 |
| 7.2.12. | Full power converter for PMSG turbines |
| 7.2.13. | Hitachi's most powerful converter based on silicon IGCT technology |
| 7.2.14. | ABB's lower-power converter based on IGBT technology |
| 7.2.15. | Ingeteam full converter supports up to 18MW |
| 7.2.16. | Infineon's two dual-IGBT power modules optimized for converters |
| 7.2.17. | Summary of existing wind power converters and power modules |
| 7.2.18. | Hopewind's partnership with Wolfspeed for wind converters |
| 7.2.19. | Wind power electronics forecast by converter type |
| 7.2.20. | Wind power converter forecast by semiconductor material |
| 7.3. | Voltage-source converter HVDC in offshore wind |
| 7.3.1. | What is VSC-HVDC? |
| 7.3.2. | Benefits of HVDC over AC in offshore wind |
| 7.3.3. | Map of global HVDC wind farm projects |
| 7.3.4. | VDC-HVDC is reliant on well-established silicon IGBT technology |
| 8. | FORECASTS |
| 8.1. | Methodology |
| 8.2. | Power electronics market forecast by semiconductor material 2023-2036 |
| 8.3. | Power electronics overall market forecast by application area |
| 8.4. | Electric vehicle power electronics forecast by semiconductor material |
| 8.5. | EV power electronics market forecast by semiconductor and application |
| 8.6. | Data center power electronics forecast by semiconductor material |
| 8.7. | Data center 800VDC (HVDC) market forecast |
| 8.8. | Wind power electronics forecast by converter type |
| 8.9. | Wind power converter forecast by semiconductor material |
| 9. | COMPANY PROFILES |
| 9.1. | AcBel Polytech Inc. |
| 9.2. | Asahi Diamond Industrial Co. Ltd. |
| 9.3. | Atecom Technology Co., Ltd. |
| 9.4. | BMW |
| 9.5. | Bosch Semiconductors |
| 9.6. | BYD Auto |
| 9.7. | Diamond Foundry: Electric Vehicle Inverters |
| 9.8. | Efficient Power Conversion: GaN FETs |
| 9.9. | Efficient Power Conversion: GaN in Automotive |
| 9.10. | Element 3-5 GmbH |
| 9.11. | Gallox Semiconductors |
| 9.12. | Hebei Synlight Semiconductor |
| 9.13. | Hitachi Energy Ltd. |
| 9.14. | Hyundai |
| 9.15. | Infineon: 750V SiC MOSFETs for Onboard Chargers |
| 9.16. | Infineon: Automotive Power Electronics |
| 9.17. | Infineon: Expanding SiC OEM Partnerships |
| 9.18. | JB Dianet LLP |
| 9.19. | Leguan |
| 9.20. | Nexperia: GaN for EV Power Electronics |
| 9.21. | Novomorphic |
| 9.22. | QPT: MHz Switching, Active Cooling GaN |
| 9.23. | Silanna UV |
| 9.24. | Silicon Austria Labs GmbH |
| 9.25. | Transphorm (Renesas) GaN for high power applications |
| 9.26. | TYSiC |
| 9.27. | Wolfspeed: Major SiC Supply Deals |
| 9.28. | Zhonghuan Advanced Semiconductor Technology Co., Ltd. |
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Power Electronics Market 2026-2036: Electric Vehicles, Data Centers, and Renewables
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Electronic and 1 Hardcopy (1-5 users)
元61,000.00
Electronic and 1 Hardcopy (6-10 users)
元84,000.00
Electronic (1-5 users)
¥990,000
Electronic (6-10 users)
¥1,406,000
Electronic and 1 Hardcopy (1-5 users)
¥1,140,000
Electronic and 1 Hardcopy (6-10 users)
¥1,556,000
Electronic (1-5 users)
₩10,500,000
Electronic (6-10 users)
₩15,000,000
Electronic and 1 Hardcopy (1-5 users)
₩12,100,000
Electronic and 1 Hardcopy (6-10 users)
₩16,600,000
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Power electronics market to exceed US$65 billion by 2036.
Report Statistics
| Slides | 295 |
|---|---|
| Companies | 28 |
| Forecasts to | 2036 |
| Published | Apr 2026 |
Preview Content
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