QUOTES

Konferenz Agenda

 

Tuesday, 13 Apr 2010

 Keynote Speakers
08:45Nokia
09:35Procter & Gamble
10:25Refreshment Break
11:55Sharp Laboratories of America
12:20Stora Enso Packaging Boards
11:05Plastic Logic GmbH
08:30IDTechEx
10:00DARPA MTO
12:20Ericsson
09:10TOTAL S.A. - Gas & Power
11:30ST Ericsson
12:45LUNCH

Track 1

 End Users
14:40Electrolux Italia S.p.A
15:05Kimberly-Clark
14:15Novalia
 Transit
15:55Break
16:35RATP (Paris Transport)
15:30Cubic Transportation Systems
 Healthcare
17:00E2M Technology Limited
 Commercial progress with Electroluminescent technology
17:50Pelikon Ltd
17:25Lumoza NV & IMO
18:15Day 1 Track 1 Ends

Track 2

 The E-reader Surge
14:40E Ink Corporation
15:05Bridgestone Corporation
14:15iRex Technologies BV
 Printed RFID
15:55Refreshment Break
16:35Sunchon National University
15:30Seoul National University
 Smart Textiles
17:50TNO Holst Center
17:25National Physical Laboratory
17:00Ohmatex ApS

Track 3

 Photovoltaics - Flexible/Portable Power
15:05Ascent Solar
14:15IDTechEx
14:40Bosch Rexroth AG
15:30Neuber
15:55Refreshment Break
 Inorganic Technologies
17:25Sandia National Laboratories
17:50Solarion AG
16:35EMPA
17:00Q-mo solar AG
18:15Day 1 Track 3 Ends

Wednesday, 14 Apr 2010

Track 1

 New Enabling Products
08:55Acreo
08:30IDTechEx
 Integrating Printed Electronics
09:20Soligie
 Flexible Printed LCD Displays
10:10Refreshment Break
11:15Hong Kong University of Science and Technology
10:50Kent Displays Inc
09:45LG Display
 OLED Lighting and Displays
11:40Au Optronics Corporation
12:05Samsung Advanced Institute of Technology
12:30LUNCH
 Electrochromic & Electrowetting Displays
14:00Siemens AG
14:25ADT GmbH
14:50Liquavista
 Architectural Lighting
15:15Ryan Harc Design
 Stretchable Electronics
15:40MC10
16:05Refreshment Break
 Global Trends & Developments
16:45National Science Foundation
17:35Faraday
17:10PolyPhotonix
18:00Day 2 Track 1 Ends

Track 2

 Printed Silicon
08:30NanoGram Corp
08:55University of Cape Town
 CNT & Graphene
09:20Fujitsu Laboratories Ltd
09:45Canatu Oy
10:10Refreshment Break
 The Rise of Zinc Oxide Electronics
10:50Cambridge University
11:40Hewlett-Packard
11:15Fraunhofer IST
 The Copper Ink Breakthrough
12:05NovaCentrix
12:30LUNCH
14:00Hitachi Chemical Co Ltd
 Thin Flexible Batteries
14:25Uppsala University
14:50Hochschule der Medien Stuttgart
 Replacing ITO
15:15Agfa Materials
15:40Fraunhofer ISC
16:05Refreshment Break
16:45Day 2 Track 2 Ends

Track 3

 Organic and DSSC Photovoltaics
10:10Refreshment Break
10:50TU Dresden
08:55IDTechEx
11:40Coatema Coating Machinery GmbH
09:20CSIRO
09:45Dyesol
08:30Konkuk University
11:15Universitat Jaume I
 Barrier Materials
12:053M Display & Graphics Business Lab
12:30LUNCH
14:25DELO Industrial Adhesives
14:00TNO Holst Center
Huntsman Advanced Materials Switzerland
 Testing & Inspection
14:50Atlas MTT GMBH
 Sensors
15:15VTT Technical Research Centre of Finland
 Energy Harvesting for Printed Electronics
15:40University of Southampton
16:05Dat 2 Track 3 Ends

Track 4

 Memory & Transistors
09:20Toppan Printing Co Ltd
09:45Nano ePrint Ltd
08:55HUECK FOLIEN Ges.m.b.H.
08:30NIST
10:10Refreshment Break
 Printing
11:15Xennia Technology Ltd
12:30LUNCH
15:15Technische Universität Darmstadt
12:05Optomec Inc
14:00Daetwyler R&D Corp
14:50Fundacio Privada Cetemmsa
10:50Flexible Display Roll to Roll Research Center(FDRC)
14:25Korea Institute of Machinery and Materials
11:40PixDro b.v.
15:40MatOx Limited
16:05Refreshment Break
16:45Day 2 Track 4 Ends
 
 
 

Wednesday April 14, 2010

Memory & Transistors (08:30 - 10:50)

NIST, United States, Dr Nadine Gergel-Hackett, Researcher
08:30 - 08:55 "A Flexible Solution-Processed Memristor"
  • We have demonstrated a flexible, solution-processed, nonvolatile, low power, inexpensive, TiO2-based flexible memory component with electrical behavior that is consistent with a memristor, an electrical device that has recently been declared to be the missing fourth circuit element.
  • The memory device has operation voltage of less than 10 V, on/off ratios greater than 10,000:1, exhibits memory potential that is nonvolatile for over 1.2x106 s, and is operational after 4,000 flexes.
  • We are investigating the mechanism behind the memristor behavior, as well as the correlations between the device dimensions (e.g., contact area, film thickness) and the desired electrical behaviors.
 
HUECK FOLIEN Ges.m.b.H., Austria, Mr Klaus Schmidegg,
08:55 - 09:20 "Roll-to-Roll Production of Flexible Memory Devices"
  • We have developed a hybrid roll-to-roll process on standard industrial converting lines for manufacturing diode array memory devices on flexible substrates. WORM memory devices with sizes of up to 100 bits have been produced on PET substrates.
  • These devices can be used for storing data such as product codes or authentication information, as an electronic bar code or as components in other electronic systems.
  • Furthermore, a computer interface was designed for reading the content of the memory cells.
 
Toppan Printing Co Ltd, Japan, Mr Toru Okubo, Research Leader
09:20 - 09:45 "Development of Printed Organic Thin Film Transistors"
  • Printing techniques for organic TFTs
  • Challenges to organic TFTs with high performance and reliability
  • Printed organic TFT backplane for electrophoretic displays
 
Nano ePrint Ltd, United Kingdom, Dr Richard Price, VP Product Management
09:45 - 10:10 "Integrating Printed Electronics into Real-World Applications"
  • The need for an ecosystem
  • Integrating different printed electronics components
  • Implications for intelligent printed logic
 
10:10 Refreshment Break
 
 
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