Amorphous Silicon to Zinc Oxide: Developments in Inorganic TFTs for Displays (Printed Electronics Europe 2007)

Dr Andrew Flewitt,
University of Cambridge, United Kingdom
 

Presentation Summary

  • Amorphous silicon currently dominates as the channel material in thin film transistors for AMLCDs, but suffers from a degradation that limits its future use in OLED displays.
  • The nature of these limitations will be discussed in terms of the atomic structure of the material.
  • Alternative inorganic materials will be reviewed that have the potential to outperform amorphous silicon with particular focus on zinc oxide.

Company Profile (University of Cambridge, Dept of Engineering)

University of Cambridge, Dept of Engineering logo
Cambridge University Engineering Department, which was rated as a 5* Department in the last Research Assessment Exercise, has been carrying out research in thin film transistors based on amorphous silicon and other inorganic materials for more than ten years. It has a state-of-the-art clean facility within the Centre for Advanced Photonics and Electronics. This includes 160 m2 of Class 10,000 laboratories which houses a range of deposition systems for producing a diverse range of materials including metallic thin films, amorphous silicon, high-k dielectrics, carbon nanotubes and silicon nanowires. There is a further 140 m2 of Class 1,000 laboratories which includes processing facilities for 1 µm photolithography and nanoparticle-polymer composite processing. Finally, there is 140 m2 of Class 100 laboratories which includes a rapid thermal annealer, deep reactive ion etch system, liquid crystal processing facility, 0.5 µm double-sided mask aligner and an e-beam lithography system.
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