Fabrication and Stability Characterisation of Thin Film Transistors Based on Indium Zinc Oxide Deposited at Low Temperature (Printed Electronics Europe 2009)

Dr Flora Li, Research Associate
University of Cambridge, United Kingdom
Apr 08, 2009.


University of Cambridge Presentation*

If you already have access, please [Login]

Presentation Summary

  • The deposition of metal oxides using a high rate sputtering technology will be described.
  • Thin film transistors fabricated using amorphous indium zinc oxide as the channel layer will be shown to have a field effect mobility of 10 cm2 V-1 s 1, which is an order of magnitude better than amorphous silicon technology.
  • The results of stressing metal oxide thin film transistors will be presented to allow assessment of stability.

Speaker Biography (Flora Li)

Dr. Flora Li is a Research Associate in the Electrical Engineering Division at Cambridge University. She received the Ph.D. degree in Electrical and Computer Engineering from the University of Waterloo, Canada, in 2008, where she investigated the integration of organic thin film transistors. Her research interests include thin film technology and devices based on transparent conducting oxides, organic materials, nanomaterials, nanocomposites, and amorphous/nanocrystalline silicon, for applications in large area electronics and flexible electronics including displays, sensors, photovoltaics, functional windowpanes, biosensors, smart cards, etc. Dr. Li has been awarded a national Postdoctoral Fellowship (PDF) from the Natural Sciences and Engineering Research Council (NSERC) of Canada in 2008. She was a Visiting Scientist at Xerox Research Centre of Canada (XRCC) from 2005-2008. She is a co-author of CCD Image Sensors in Deep-Ultraviolet (Springer, 2005).

Company Profile (University of Cambridge, Dept of Engineering)

University of Cambridge, Dept of Engineering logo
Cambridge University Engineering Department, which was rated as a 5* Department in the last Research Assessment Exercise, has been carrying out research in thin film transistors based on amorphous silicon and other inorganic materials for more than ten years. It has a state-of-the-art clean facility within the Centre for Advanced Photonics and Electronics. This includes 160 m2 of Class 10,000 laboratories which houses a range of deposition systems for producing a diverse range of materials including metallic thin films, amorphous silicon, high-k dielectrics, carbon nanotubes and silicon nanowires. There is a further 140 m2 of Class 1,000 laboratories which includes processing facilities for 1 µm photolithography and nanoparticle-polymer composite processing. Finally, there is 140 m2 of Class 100 laboratories which includes a rapid thermal annealer, deep reactive ion etch system, liquid crystal processing facility, 0.5 µm double-sided mask aligner and an e-beam lithography system.
View University of Cambridge, Dept of Engineering Timeline