Transparent Electronics: From n - to p-type Oxide Thin Film Transistors (Printed Electronics and Photovoltaics Europe 2011)

Prof Elvira Maria Fortunato, Professor
Uni of Lisbon Faculdade de Ciencias e Tecnologia
Portugal
 
2011年4月6天.

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Presentation Summary

  • Although the performance achieved with oxide transistors processed at low temperatures exceed far beyond the ones obtained with amorphous silicon and organic semiconductors, the oxides reported in the literature are mostly limited to n-type device applications, since there is a lack of p-type oxide semiconductors, mainly regarding the ones processed at low substrate temperatures.
  • In this work we report p-type oxide TFTs based on transparent SnOx and Cu2O semiconductors deposited by reactive rf sputtering at room temperature, with the final devices requiring annealing temperatures of only 200 °C to exhibit improved electrical properties over similar devices reported in literature, produced at considerably higher temperatures.
  • The good performance achieved precludes a promising future integration of these devices with the already well-established n-type oxide TFTs in flexible, low-cost and transparent CMOS structures.

Speaker Biography (Elvira Maria Fortunato)

Elvira Fortunato (born 1964) received her Ph.D degree in Physics and Materials in 1995 and her Aggregation (teaching certificate) in Microelectronic and Optoelectronic in 2005 at New University of Lisbon. She is Associate Professor since 1998 in the Materials Science Department of New University of Lisbon and has been director of the Materials Research Centre (CENIMAT) since 1998, and Director of Institute for Nanotechnologies, Nanomaterials and Nanosciences (I3N) since 2007. Fortunato pioneered European research on thin-film transistors based on oxide semiconductors, demonstrating that oxide materials may be used as true semiconductors. Her recent accomplishments include the first ZnO-based transparent thin-film transistor (TTFT) deposited at room temperature by rf magnetron sputtering with high field-effect mobility. Fortunato's current interests are in the design, fabrication, conduction transport mechanisms and characterization of amorphous multicomponent oxide-based TTFTs. She is also interested in the development of novel electrochromic devices. She published (or has in press) over 240 SCI papers, and supervised(es) 5 post-docs and 16 Ph.D/MSc students. In 2005 she received from the Portuguese Science Foundation (FCT-MCTES) the prize for Scientific Excellence. She is Associate Editor of Rapid Research Letters Physica Status Solidi since November 2006 (Wiley). In 2007 she was awarded with the Gold Medal from the Municipality of Almada and more recently (2008) she win an Advanced Grant from the European Research Council for the project "Invisible".

Company Profile (Faculdade de Ciencias e Tecnologia)

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The FCT-UNL (www.fct.unl.pt) was founded in 1974 and is considered to have attained a leading role in the Portuguese scientific and technical training and research. It has at present more than 3500 students, ca. 550 members of staff and provides 18 courses at postgraduate level and 12 licentiate ships, covering a broad scientific range, with special emphasis in the new technologic fields such as materials engineering or environment. It has also a notable Ph.D. program, having one of the highest doctorate turnovers of the country.
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