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| EXECUTIVE SUMMARY | |
| 1. | INTRODUCTION |
| 1.1. | Carbon Nanotubes |
| 1.1. | Structure of single-wall carbon nanotubes |
| 1.2. | The chiral vector is represented by a pair of indices (n, m). T denotes the tube axis, and a1 and a2 are the unit vectors of graphene in real space |
| 1.2. | Graphene |
| 2. | PROPERTIES |
| 2.1. | Properties of CNTs |
| 2.1. | Typical Sheet Resistivity figures for conductors |
| 2.1. | Atomic Force Microscope image of carbon nanotubes before and after processing. |
| 2.2. | Potential applications are flexible solar cells, displays and touch screens. |
| 2.2. | Comparison of the main options for semiconductors |
| 2.2. | Metallic/semiconducting CNT separation |
| 2.3. | CNTs as conductors |
| 2.3. | Targeted applications for carbon nanotubes by Eikos |
| 2.4. | Conductance in ohms per square for the different printable conductive materials, at typical thicknesses used, compared with bulk metal |
| 2.4. | Comparison to other conductors |
| 2.5. | Comparison to other semiconductors |
| 2.6. | Properties of graphene |
| 2.7. | Creating a band gap in graphene |
| 3. | MANUFACTURE |
| 3.1. | Manufacture of CNTs |
| 3.1. | Traditional CNT film processes are complex |
| 3.1.2. | Arc Method |
| 3.1.3. | Laser Ablation Method |
| 3.1.4. | Chemical Vapor Deposition (CVD) |
| 3.2. | Manufacture of Graphene |
| 3.2.1. | Scotch tape method |
| 3.2.2. | Epitaxial Graphene - grown on silicon-carbide crystals |
| 3.2.3. | Expanded Graphene |
| 3.2.4. | Templated growth |
| 4. | APPLICATIONS |
| 4.1. | Printing Carbon Nanotubes and Graphene |
| 4.1. | Main applications of conductive inks and some major suppliers today |
| 4.1. | New printable elastic conductors made of carbon nanotubes are used to connect OLEDs in a stretchable display that can be spread over a curved surface |
| 4.1.1. | Latest progress |
| 4.2. | Stretchable mesh of transistors connected by elastic conductors |
| 4.2. | Comparison of the three types of capacitor when storing one kilojoule of energy. |
| 4.2. | Conductors |
| 4.2.1. | Deposition technologies and main applications |
| 4.2.2. | Latest progress with CNT conductors |
| 4.2.3. | Challenges |
| 4.3. | Transistors |
| 4.3. | Hybrid graphene-carbon nanotube G-CNT conductors |
| 4.3.2. | CNT Transistors |
| 4.3.3. | Graphene Transistors |
| 4.3.4. | Challenges |
| 4.4. | Traditional geometry for a field effect transistor |
| 4.4. | OLEDs and flexible displays |
| 4.4.2. | Latest progress |
| 4.5. | Lighting |
| 4.5. | CNT Transistors through Specialized Printing Processes from NEC Corporation |
| 4.6. | IBM has patterned graphene transistors with a metal top-gate architecture (top) fabricate on 2-inch wafers (bottom) created by the thermal decomposition of silicon carbide. |
| 4.6. | Energy storage devices |
| 4.6.1. | Batteries |
| 4.6.2. | Supercapacitors |
| 4.7. | Photovoltaics |
| 4.7. | Carbon nanotube Field Effect transistors |
| 4.7.1. | Organic Photovoltaics |
| 4.7.2. | Hybrid organic-inorganic photovoltaics |
| 4.7.3. | Infrared solar cells |
| 4.7.4. | Photodiode |
| 4.8. | Epitaxial graphene FETs on a two-inch wafer scale |
| 4.8. | NRAM data storage device |
| 4.9. | Sensors and smart textiles |
| 4.9. | An enlarged photo of a several-millimeter square chip with graphene transistors. The graphene transistors can be seen in the enlarged photo of the tips of the two electrodes |
| 4.10. | An LSI mounted on a flexible substrate by using CNT bumps |
| 4.10. | Thin film speakers |
| 4.11. | Two types of OLED construction |
| 4.12. | CNT networks for flexible displays |
| 4.13. | ANI: proof of concept CNT lamp |
| 4.14. | Internal structure of Power Paper Battery. |
| 4.15. | Proposed battery design from UCLA |
| 4.16. | Energy density vs power density for storage devices |
| 4.17. | The carbon nanotube supercapacitor versus batteries and traditional capacitors |
| 4.18. | The process. The resulting film is photographed atop a color photo to show its transparency |
| 4.19. | Georgia Tech Research Institute (GTRI) scientists have demonstrated an ability to precisely grow "towers" composed of carbon nanotubes atop silicon wafers. The work could be the basis for more efficient solar power for soldiers in |
| 4.20. | A three-terminal memory cell based on suspended carbon nanotubes: (a) nonconducting state '0', (b) conducting state '1', and (c) Nantero's NRAM™. |
| 4.21. | The main options for organic sensors |
| 4.22. | Four scanning electron microscope images of the spinning of carbon nanotube fibres |
| 4.23. | Photographs of CNT-cotton yarn. (a) Comparison of the original and surface modified yarn. (b) 1 meter long piece as made. (c) Demonstration of LED emission with the current passing through the yarn. |
| 4.24. | Thin, almost transparent sheets of multi-wall (MWNT) nanotubes are connected to an electrical source, which rapidly heats the nanotubes causing a pressure wave in the surrounding air to produce sound. |
| 4.25. | The CNT thin film was put on a flag to make a flexible flag loudspeaker |
| 4.26. | Carbon nanotube thin film loudspeakers |
| 5. | COMPANY PROFILES |
| 5.1. | Baytubes product specifications |
| 5.1. | Hormone Sensing using CNT Printed Integrated Circuits |
| 5.1. | Aneeve Nanotechnologies LLC, USA |
| 5.2. | Angstron Materials LLC., USA |
| 5.2. | ANI: proof of concept CNT lamp |
| 5.2. | Results of pulse-heat CVD |
| 5.3. | Characteristics of the CNT-FED compared with LEDs |
| 5.3. | Fully printed CNT FET-based switch |
| 5.3. | Applied Nanotech, USA |
| 5.4. | Arry International Group, Hong Kong |
| 5.4. | Fully printed TFT device schematic |
| 5.5. | Transparent conductive material roadmap: Gen 1 at the moment; Gen 2 is the goal for end of 2010, Gen 3 is the long term target |
| 5.5. | BASF, Germany |
| 5.6. | Bayer MaterialScience, Germany |
| 5.6. | Directly produced prepatterned films |
| 5.7. | Cap-XX supercapacitor technology with carbon coating. |
| 5.7. | Brewer Science, USA |
| 5.8. | Canatu Ltd., Finland |
| 5.8. | Layout of CNT-FE BLU fabricated through pulse |
| 5.9. | Schematic illustration of experimental setup |
| 5.9. | Carben Semicon Ltd, Russia |
| 5.10. | Carbon Solutions, Inc., USA |
| 5.10. | Illustrations of micro-patterned cathodes |
| 5.11. | SEM images of CNTs on Samples C, D and E |
| 5.11. | CarboLex, Inc., USA |
| 5.12. | Cap-XX Australia |
| 5.12. | Field emission properties of CNT-emitters patterned on a glass substrate by pulse-heat CVD. Luminescence images from the backsides of the cathode at various applied voltages are indicated in inset. |
| 5.13. | SEM images of CNTs on the micro-patterned electrodes with interline spacing (a) 20, (b) 50, (c) 100 and (d)200 !m (top view). |
| 5.13. | Case Western Reserve University, USA |
| 5.14. | Catalyx Nanotech Inc. (CNI), USA |
| 5.14. | CNT Ink Production Process |
| 5.15. | Target application areas of Eikos |
| 5.15. | CheapTubes, USA |
| 5.16. | Chengdu Organic Chemicals Co. Ltd. (Timesnano), China |
| 5.16. | IBM has patterned graphene transistors with a metal top-gate architecture (top) fabricate on 2-inch wafers (bottom) created by the thermal decomposition of silicon carbide. |
| 5.17. | The graphene microchip mostly based on relatively standard chip processing technology |
| 5.17. | CNano Technology Ltd, USA |
| 5.18. | Cornell University, USA |
| 5.18. | Cncept version of the photoelectrochemical cell |
| 5.19. | This filament containing about 30 million carbon nanotubes absorbs energy from the sun |
| 5.19. | CSIRO, Australia |
| 5.20. | C3Nano, Inc., USA |
| 5.20. | Density gradient ultracentrifugation |
| 5.21. | Color pixel; 3mm, display area; 48mm x480mm |
| 5.21. | Dainippon Screen Mfg. Co., Ltd., Japan |
| 5.22. | DuPont Microcircuit Materials (MCM), USA |
| 5.22. | Color pixel; 1.8mm, display area; 57.6mm x 460.8mm. |
| 5.23. | A prototype display of digital signage. |
| 5.23. | Eden Energy Ltd., Australia |
| 5.24. | Eikos, USA |
| 5.24. | Application images of public displays. |
| 5.25. | Schematic structure of CNT-FED using line rib spacer. |
| 5.25. | Frontier Carbon Corporation (FCC), Japan |
| 5.26. | Fujitsu Laboratories, Japan |
| 5.26. | Phosphor-dot pattern and conductive black-matrix pattern. |
| 5.27. | An application on the information desk. The color pixel pitch were 3mm(left) and 1.8mm (right). |
| 5.27. | Future Carbon GmbH, Germany |
| 5.28. | Georgia Tech Research Institute (GTRI), USA |
| 5.28. | A photograph of a displayed color character pattern in two lines. The color pixel pitch was 1.8mm. |
| 5.29. | SEM images of CNT deposited metal electrode.(a) A photograph of the CNT deposited metal frame. (b) SEM image; boundary of barrier area. (c) SEM image; surface of the CNT layer. (d) SEM image; a surface morphology of CNT. |
| 5.29. | Graphene Energy Inc., USA |
| 5.30. | Graphene Industries Ltd., UK |
| 5.30. | One of prototype displays on the vending machine. The display was under field-testing in out-door. The CNT-FED and display module were under testing continuously during ca.15months in Osaka-city up to date, and they were still con |
| 5.31. | A photograph of driving system. A solar cell and the charging controller, yellow small battery and CNT-FED module. |
| 5.31. | Hanwha Nanotech Corporation, Korea |
| 5.32. | HeJi, Inc., China |
| 5.32. | A photograph of a displayed color character which was driven by solar cell and small battery. The color pixel pitch was 1.8mm. |
| 5.33. | High density SWCNT structures on wafer-scale flexible substrate. |
| 5.33. | Helix Material Solutions Inc., USA |
| 5.34. | Hodogaya Chemical Co., Ltd., Japan |
| 5.34. | SEM micrographs of assembled SWNT structures on a soft polymer surface. (a) Patterned SWNT arrays on parylene-C substrate; (b) high magnification view of a typical central area; (c) SWNT micro-arrays that are 4 μm wide with 5 μm s |
| 5.35. | A new method for using water to tune the band gap of the nanomaterial graphene |
| 5.35. | Honda Research Institute USA Inc. (HRI-US), USA |
| 5.36. | Honjo Chemical Corporation, Japan |
| 5.36. | A mesh of carbon nanotubes supports one-atom-thick sheets of graphene that were produced with a new fluid-processing technique. |
| 5.37. | A three-terminal single-transistor amplifier made of graphene |
| 5.37. | HRL Laboratories, USA |
| 5.38. | Hyperion Catalysis International, Inc. |
| 5.38. | CNT films from Rutgers University |
| 5.39. | Printed CNT transistor |
| 5.39. | IBM, USA |
| 5.40. | Intelligent Materials PVT. Ltd. (Nanoshel), India |
| 5.40. | A 16 bit HF RFID inlay |
| 5.41. | The one bit commercial display tag |
| 5.41. | Massachusetts Institute of Technology (MIT), USA |
| 5.42. | Max Planck Institute for Solid State Research, Germany |
| 5.42. | Graphene OPV |
| 5.43. | The resulting film is photographed atop a color photo to show its transparency |
| 5.43. | MER Corporation, USA |
| 5.44. | Mitsui Co., Ltd, Japan |
| 5.44. | Fabrication steps, leading to regular arrays of single-wall nanotubes (bottom). |
| 5.45. | The colourless disk with a lattice of more than 20,000 nanotube transistors in front of the USC sign. |
| 5.45. | Mknano, Canada |
| 5.46. | Nano-C, USA |
| 5.46. | Thin, almost transparent sheets of multi-wall (MWNT) nanotubes are connected to an electrical source |
| 5.47. | NanoCarbLab (NCL), Russia |
| 5.48. | Nano Carbon Technologies Co., Ltd. (NCT) |
| 5.49. | Nanocomb Technologies, Inc. (NCTI), USA |
| 5.50. | Nanocs, USA |
| 5.51. | Nanocyl s.a., Belgium |
| 5.52. | NanoIntegris, USA |
| 5.53. | NanoLab, Inc., USA |
| 5.54. | NanoMas Technologies, USA |
| 5.55. | Nano-Proprietary, Inc., USA |
| 5.56. | Nanoshel, Korea |
| 5.57. | Nanostructured & Amorphous Materials, Inc., USA |
| 5.58. | Nanothinx S.A. , Greece |
| 5.59. | Nantero, USA |
| 5.60. | National Institute of Advanced Industrial Science and Technology (AIST), Japan |
| 5.61. | National Institute of Standards & Technology (NIST), USA |
| 5.62. | NEC Corporation, Japan |
| 5.63. | New Jersey Institute of Technology (NJIT), USA |
| 5.64. | Noritake Co., Japan |
| 5.65. | North Carolina State University, USA |
| 5.66. | North Dakota State University (NDSU), USA |
| 5.67. | Northeastern University, Boston, USA |
| 5.68. | Optomec, USA |
| 5.69. | PARU, Korea |
| 5.70. | Pennsylvania State University, USA |
| 5.71. | PETEC (Printable Electronics Technology Centre), UK |
| 5.72. | Purdue University, USA |
| 5.73. | Pyrograf Products, Inc., USA |
| 5.74. | Rensselaer Polytechnic Institute (RPI), USA |
| 5.75. | Rice University, USA |
| 5.76. | Rutgers - The State University of New Jersey, USA |
| 5.77. | Samsung Electronics, Korea |
| 5.78. | Sang Bo Corporation (SBK), Korea |
| 5.79. | SES Research, USA |
| 5.80. | Shenzhen Nanotechnologies Co. Ltd. (NTP) |
| 5.81. | Showa Denko Carbon, Inc. (SDK), USA |
| 5.82. | ST Microelectronics, Switzerland |
| 5.83. | SouthWest NanoTechnologies (SWeNT), USA |
| 5.84. | Sunchon National University, Korea |
| 5.85. | Sungkyunkwan University Advanced Institute of Nano Technology (SAINT), Korea |
| 5.86. | Sun Nanotech Co, Ltd., China |
| 5.87. | Surrey NanoSystems, UK |
| 5.88. | Thomas Swan & Co. Ltd., UK |
| 5.89. | Toray Industries, Japan |
| 5.90. | Tsinghua University, China |
| 5.91. | Unidym, Inc., USA |
| 5.92. | University of California Los Angeles (UCLA), USA |
| 5.93. | University of California, San Diego, USA |
| 5.94. | University of Central Florida, USA |
| 5.95. | University of Cincinnati (UC), USA |
| 5.96. | University of Manchester, UK |
| 5.97. | University of Michigan, USA |
| 5.98. | University of Pittsburgh, USA |
| 5.99. | University of Southern California (USC), USA |
| 5.100. | University of Stanford, USA |
| 5.101. | University of Stuttgart, Germany |
| 5.102. | University of Surrey, UK |
| 5.103. | University of Texas at Austin, USA |
| 5.104. | University of Texas at Dallas, USA |
| 5.105. | University of Tokyo, Japan |
| 5.106. | University of Wisconsin-Madison, USA |
| 5.107. | Vorbeck Materials Corp, USA |
| 5.108. | Wisepower Co., Ltd., Korea |
| 5.109. | XG Sciences, USA |
| 5.110. | XinNano Materials, Inc., Taiwan |
| 5.111. | Y-Carbon |
| 5.112. | Zoz GmbH, Germany |
| 5.113. | Zyvex, Inc., USA |
| 6. | NETWORK PROFILES |
| 6.1. | CONTACT |
| 6.2. | Inno.CNT |
| 6.3. | National Technology Research Association (NTRA) |
| 6.4. | TRAMS - Tera-scale reliable Adaptive Memory Systems |
| 7. | FORECASTS AND COSTS |
| 7.1. | Market forecast by component type for 2011 to 2021 in US $ billions, for printed and potentially printed electronics including organic, inorganic and composites |
| 7.1. | Supercapacitors |
| 7.1. | Market Opportunity and roadmap for Carbon Nanotubes and Graphene |
| 7.2. | Costs of SWCNTs |
| 7.2. | Market forecast by component type for 2011-2021 in US $ billions, for printed and potentially printed electronics including organic, inorganic and composites |
| 7.2. | Costs of SWeNTs |
| 7.3. | SES Research |
| 7.3. | Chengdu Organic Chemicals Co. Ltd. (Timesnano) |
| 7.3. | New Focus for Printed Electronics - the importance of flexible electronics |
| 7.4. | Focus on invisible electronics |
| 7.4. | HeJi Inc |
| 7.4. | Nanothinx S.A. (price per gram in Euros) |
| 7.5. | Nanocs |
| 7.5. | The percentage of printed and partly printed electronics that is flexible 2011-2021 |
| 7.5. | Shakeout in organics |
| 7.6. | Market pull |
| 7.6. | Evolution of printed electronics structures |
| 7.6. | Arry International Group |
| 7.7. | Carbon Solutions |
| 7.8. | Carbolex |
| 7.9. | Cheaptubes |
| 7.10. | Helix Material Solutions |
| 7.11. | MER Corporation |
| APPENDIX 1: GLOSSARY | |
| APPENDIX 2: IDTECHEX PUBLICATIONS AND CONSULTANCY | |
| TABLES | |
| FIGURES |
| Pages | 303 |
|---|---|
| Tables | 20 |
| Figures | 86 |
| Companies | Over 110 |
| 预测 | 2021 |