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Carbon Nanotubes and Graphene for Electronics Applications 2010-2020
Updated in Q2 2010
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Carbon Nanotubes (CNTs), graphene and their compounds exhibit extraordinary electrical properties for organic materials, and have a huge potential in electrical and electronic applications such as photovoltaics, sensors, semiconductor devices, displays, conductors, smart textiles and energy conversion devices (e.g., fuel cells, harvesters and batteries). This updated report brings all of this together, covering the latest work from 100 organizations around the world to details of the latest progress applying the technologies. New developments, challenges and opportunities regarding material production and applications are given.
Applications of Carbon Nanotubes and Graphene for electronics applications
Depending on their chemical structure, carbon nanotubes (CNTs) can be used as an alternative to organic or inorganic semiconductors as well as conductors, but the cost is currently the greatest restraint. However, that has the ability to rapidly fall as new, cheaper mass production processes are established, which we cover in this report. In electronics, other than electromagnetic shielding, one of the first large applications for CNTs will be conductors. In addition to their high conductance, they can be transparent, flexible and even stretchable. Here, applications are for displays, replacing ITO; touch screens, photovoltaics and display bus bars and beyond.
In addition, interest is high as CNTs have demonstrated mobilities which are magnitudes higher than silicon, meaning that fast switching transistors can be fabricated. In addition, CNTs can be solution processed, i.e. printed. In other words, CNTs will be able to provide high performing devices which can ultimately be made in low cost manufacturing processes such as printing, over large areas. They have application to supercapacitors, which bridge the gap between batteries and capacitors, leveraging the energy density of batteries with the power density of capacitors and transistors.
Challenges are material purity, device fabrication, and the need for other device materials such as suitable dielectrics. However, the opportunity is large, given the high performance, flexibility, transparency and printability. Companies that IDTechEx surveyed report growth rates as high as 300% over the next five years. New developments regarding the production of pure CNTs and the separation of conducting and semiconducting carbon nanotubes are given in this updated report.
Graphene, a cheap organic material, is being enhanced by companies that are increasing its conductivity, to be used in some applications as a significantly cheaper printed conductor compared to silver ink. Graphene and its compounds are increasingly used to make transistors that show extremely good performance - a progress that comes with new cheaper production processes for the raw material. All this work is covered in this updated report from IDTechEx.
Now with activity from 100 organizations profiled
IDTechEx has researched 100 companies and academic institutions working on carbon nanotubes, graphene and their compounds, all profiled in the report. While manufacturers in North America focus more on single wall CNTs (SWCNTs); Asia and Europe, with Japan on top and China second, are leading the production of multi wall CNTS (MWCNTs) with Showa Denko, Mitsui and Hodogaya Chemical being among the largest suppliers.
Opportunities for Carbon Nanotube material supply
A number of companies are already selling CNTs with metallic and semiconducting properties grown by several techniques in a commercial scale but mostly as raw material and in limited quantities. However, printable CNT inks are beginning to hit the market. The last year has shown further development regarding cheap production, purification and separation of conducting and semiconducting nanotubes. However, the selective and uniform production of CNTs with specific diameter, length and electrical properties is yet to be achieved in commercial scale.
Opportunities for Carbon Nanotube device manufacture
There are still some hurdles to overcome when using printing for the fabrication of thin carbon nanotube films. There is relatively poor quality of the nanotube starting material, which mostly shows a low crystallinity, low purity and high bundling. Subsequently, purifying the raw material without significantly degrading the quality is difficult. Furthermore there is also the issue to achieve good dispersions in solution and to remove the deployed surfactants from the deposited films. Nevertheless, especially research institutes and material suppliers are working to solve the biggest issues in short time. The latest work by company is featured in the report.
Key benefits of purchasing this report
This concise and unique updated report from IDTechEx gives an in-depth review to the applications, technologies, emerging solutions and players. It addresses specific topics such as:
- Activities of 100 global organizations which are active in the development of materials or devices using carbon nanotubes or graphene.
- Application to conductors, displays, transistors, super capacitors, batteries, photovoltaics and much more
- Types of carbon nanotubes and graphene and their properties and impact on electronics
- Current development as well as challenges in production and use and opportunities
- Forecasts for the entire printed electronics market which carbon nanotubes and printed electronics could impact
For those involved in making or using carbon nanotubes, or those developing displays, photovoltaics, transistors, energy storage devices and conductors and want to learn about how they can benefit from this technology, this is a must-read report.
Stay Updated with Free IDTechEx Research
The report price also includes free access to the electronic version of the IDTechEx Encyclopedia of Printed Electronics with over 380 definitions and 30 illustrations. This 110 page report is normally sold for $1500. In addition, all report purchases include one hour free consulting with a report author from IDTechEx, by email or telephone. This needs to be used within 3 months of purchasing the report.
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| EXECUTIVE SUMMARY AND CONCLUSIONS | |
| 1. | INTRODUCTION |
| 1.1. | What are Carbon Nanotubes |
| 1.1. | Structure of single-walled carbon nanotubes |
| 1.1.2. | History of CNTs |
| 1.2. | What is graphene? |
| 1.2. | The chiral vector is represented by a pair of indices (n, m). T denotes the tube axis, and a1 and a2 are the unit vectors of graphene in real space. |
| 1.2.1. | Manufacturing graphene |
| 1.3. | Properties for electronic and electrical applications |
| 1.3. | Traditional CNT film processes are complex |
| 1.4. | CNT networks for flexible displays |
| 1.4. | Manufacture of CNTs |
| 1.4.2. | Arc Method |
| 1.4.3. | Laser Ablation Method |
| 1.4.4. | Chemical Vapor Deposition (CVD) |
| 1.5. | Printing Carbon Nanotubes |
| 1.5. | CNT Transistors through Specialized Printing Processes from NEC Corporation |
| 1.6. | Latest progress with printing carbon nanotubes |
| 1.6.1. | Application of printed carbon nanotubes to flexible displays |
| 1.6.2. | Application of printed carbon nanotubes to transistors |
| 1.6.3. | Application of printed carbon nanotubes to energy storage devices - supercapacitors |
| 2. | CNT/GRAPHENE TRANSISTOR |
| 2.1. | Comparison to other semiconductors |
| 2.1. | Atomic Force Microscope image of carbon nanotubes before and after processing. |
| 2.1. | Comparison of the main options for semiconductors |
| 2.2. | Carbon nanotube Field Effect transistors |
| 2.2. | Latest progress with CNT/Graphene Transistors |
| 2.2.1. | Separating metallic and semiconductor carbon nanotubes |
| 2.2.2. | Graphene field effect transistors |
| 2.3. | Challenges |
| 2.3. | Epitaxial graphene FETs on a two-inch wafer scale |
| 2.4. | Graphene field effect transistor from IBM |
| 2.5. | An enlarged photo of a several-millimeter square chip with graphene transistors. The graphene transistors can be seen in the enlarged photo of the tips of the two electrodes |
| 2.6. | An LSI mounted on a flexible substrate by using CNT bumps |
| 2.7. | Printed CNT-TFT on a DuPont® Kapton® FPC polyimide film: (a) schematic structure cross-section view, [(b) and (c)] picture of the CNT-TFT, (b) circuit, and (c) optical microphotography of the CNT-TFT (top view). The CNT-TFT is in |
| 3. | CARBON NANOTUBES AS CONDUCTORS |
| 3.1. | Potential applications are flexible solar cells, displays and touch screens. |
| 3.2. | Targeted applications for carbon nanotubes by Eikos |
| 3.2. | Typical Sheet Resistivity figures for conductors |
| 3.2. | Comparison to other conductors |
| 3.3. | Conductor deposition technologies and main applications |
| 3.3. | Main applications of conductive inks and some major suppliers today |
| 3.3. | Conductance in ohms per square for the different printable conductive materials, at typical thicknesses used, compared with bulk metal |
| 3.4. | New printable elastic conductors made of carbon nanotubes are used to connect OLEDs in a stretchable display that can be spread over a curved surface |
| 3.4. | Latest progress with Carbon Nanotube conductors |
| 3.5. | Challenges |
| 3.5. | Stretchable mesh of transistors connected by elastic conductors |
| 3.6. | Hybrid graphene-carbon nanotube G-CNT conductors |
| 4. | OTHER APPLICATIONS OF CNTS |
| 4.1. | NRAM data storage device |
| 4.1. | A three-terminal memory cell based on suspended carbon nanotubes: (a) nonconducting state '0', (b) conducting state '1', and (c) Nantero's NRAM™. |
| 4.2. | Georgia Tech Research Institute (GTRI) scientists have demonstrated an ability to precisely grow "towers" composed of carbon nanotubes atop silicon wafers. The work could be the basis for more efficient solar power for soldiers in |
| 4.2. | Organic photovoltaic devices and hybrid organic-inorganic photovoltaics |
| 4.3. | Supercapacitors and/or batteries |
| 4.3. | The carbon nanotube supercapacitor versus batteries and traditional capacitors |
| 4.4. | Anatomy of a supercapacitor: two films combining Indium Oxide (In2O3) separated by a layer of Nafion film |
| 4.4. | CNTs for smart textiles |
| 4.5. | Thin film loudspeakers |
| 4.5. | Transparent film holds embedded nanotube/nanowire capacitor with high energy density and storage capacity |
| 4.6. | Battery from Rensselaer Polytechnic Institute, USA |
| 4.6. | Sensors |
| 4.6.1. | Aneeve Nanotechnologies LLC |
| 4.6.2. | Michigan University, USA |
| 4.6.3. | University of Pittsburgh |
| 4.7. | (a) SEM image of CMG particle surface, (b) TEM image showing individual graphene sheets extending from CMG particle surface, (c) low and high (inset) magnification SEM images of CMG particle electrode surface, and (d) schematic of |
| 4.8. | Proposed battery design from UCLA |
| 4.9. | Four scanning electron microscope images of the spinning of carbon nanotube fibres |
| 4.10. | Photographs of CNT-cotton yarn. (a) Comparison of the original and surface modified yarn. (b) 1 meter long piece as made. (c) Demonstration of LED emission with the current passing through the yarn. |
| 4.11. | The CNT thin film was put on a flag to make a flexible flag loudspeaker |
| 4.12. | Carbon nanotube thin film loudspeakers |
| 5. | COMPANIES PROFILES |
| 5.1. | Aneeve Nanotechnologies LLC, USA |
| 5.1. | Hormone Sensing using CNT Printed Integrated Circuits |
| 5.1. | Baytubes product specifications |
| 5.2. | Results of pulse-heat CVD |
| 5.2. | Fully printed CNT FET-based switch |
| 5.2. | Angstron Materials LLC., USA |
| 5.3. | Apex Nanomaterials, USA |
| 5.3. | Fully printed TFT device schematic |
| 5.3. | Characteristics of the CNT-FED compared with LEDs |
| 5.4. | Transparent conductive material roadmap: Gen 1 at the moment; Gen 2 is the goal for end of 2010, Gen 3 is the long term target |
| 5.4. | Applied Nanotech, USA |
| 5.5. | Arry International Group, Hong Kong |
| 5.5. | Directly produced prepatterned films |
| 5.6. | Cap-XX supercapacitor technology with carbon coating. |
| 5.6. | BASF, Germany |
| 5.7. | Bayer MaterialScience, Germany |
| 5.7. | Layout of CNT-FE BLU fabricated through pulse |
| 5.8. | Schematic illustration of experimental setup |
| 5.8. | Brewer Science, USA |
| 5.9. | Canatu Ltd., Finland |
| 5.9. | Illustrations of micro-patterned cathodes |
| 5.10. | SEM images of CNTs on Samples C, D and E |
| 5.10. | Carben Semicon Ltd, Russia |
| 5.11. | Carbon Solutions, Inc., USA |
| 5.11. | Field emission properties of CNT-emitters patterned on a glass substrate by pulse-heat CVD. Luminescence images from the backsides of the cathode at various applied voltages are indicated in inset. |
| 5.12. | SEM images of CNTs on the micro-patterned electrodes with interline spacing (a) 20, (b) 50, (c) 100 and (d)200 !m (top view). |
| 5.12. | CarboLex, Inc., USA |
| 5.13. | Cap-XX Australia |
| 5.13. | CNT Ink Production Process |
| 5.14. | Target application areas of Eikos |
| 5.14. | Case Western Reserve University, USA |
| 5.15. | Catalyx Nanotech Inc. (CNI), USA |
| 5.15. | IBM has patterned graphene transistors with a metal top-gate architecture (top) fabricate on 2-inch wafers (bottom) created by the thermal decomposition of silicon carbide. |
| 5.16. | The graphene microchip mostly based on relatively standard chip processing technology |
| 5.16. | CheapTubes, USA |
| 5.17. | Chengdu Organic Chemicals Co. Ltd. (Timesnano), China |
| 5.17. | Density gradient ultracentrifugation |
| 5.18. | Color pixel; 3mm, display area; 48mm x480mm |
| 5.18. | CNano Technology Ltd, USA |
| 5.19. | Cornell University, USA |
| 5.19. | Color pixel; 1.8mm, display area; 57.6mm x 460.8mm. |
| 5.20. | A prototype display of digital signage. |
| 5.20. | CSIRO, Australia |
| 5.21. | Dainippon Screen Mfg. Co., Ltd., Japan |
| 5.21. | Application images of public displays. |
| 5.22. | Schematic structure of CNT-FED using line rib spacer. |
| 5.22. | DuPont, USA |
| 5.23. | Eikos, USA |
| 5.23. | Phosphor-dot pattern and conductive black-matrix pattern. |
| 5.24. | An application on the information desk. The color pixel pitch were 3mm(left) and 1.8mm (right). |
| 5.24. | Frontier Carbon Corporation (FCC), Japan |
| 5.25. | Fujitsu Laboratories, Japan |
| 5.25. | A photograph of a displayed color character pattern in two lines. The color pixel pitch was 1.8mm. |
| 5.26. | SEM images of CNT deposited metal electrode.(a) A photograph of the CNT deposited metal frame. (b) SEM image; boundary of barrier area. (c) SEM image; surface of the CNT layer. (d) SEM image; a surface morphology of CNT. |
| 5.26. | Future Carbon GmbH, Germany |
| 5.27. | Georgia Tech Research Institute (GTRI), USA |
| 5.27. | One of prototype displays on the vending machine. The display was under field-testing in out-door. The CNT-FED and display module were under testing continuously during ca.15months in Osaka-city up to date, and they were still con |
| 5.28. | A photograph of driving system. A solar cell and the charging controller, yellow small battery and CNT-FED module. |
| 5.28. | Graphene Energy Inc., USA |
| 5.29. | Graphene Industries Ltd., UK |
| 5.29. | A photograph of a displayed color character which was driven by solar cell and small battery. The color pixel pitch was 1.8mm. |
| 5.30. | High density SWCNT structures on wafer-scale flexible substrate. |
| 5.30. | HeJi, Inc., China |
| 5.31. | Helix Material Solutions Inc., USA |
| 5.31. | SEM micrographs of assembled SWNT structures on a soft polymer surface. (a) Patterned SWNT arrays on parylene-C substrate; (b) high magnification view of a typical central area; (c) SWNT micro-arrays that are 4 μm wide with 5 μm s |
| 5.32. | CNT films from Rutgers University |
| 5.32. | Hodogaya Chemical Co., Ltd., Japan |
| 5.33. | Honda Research Institute USA Inc. (HRI-US), USA |
| 5.33. | Fabrication steps, leading to regular arrays of single-wall nanotubes (bottom). |
| 5.34. | The colourless disk with a lattice of more than 20,000 nanotube transistors in front of the USC sign. |
| 5.34. | Honjo Chemical Corporation, Japan |
| 5.35. | HRL Laboratories, USA |
| 5.35. | Optical microscope image of Xintek's CNT films |
| 5.36. | A field emission image of an array of CNT dots of 2mm in diameter (1.55V/μm) |
| 5.36. | Hyperion Catalysis International, Inc. |
| 5.37. | IBM, USA |
| 5.38. | ILJIN Nanotech Co. Ltd., Korea |
| 5.39. | Intelligent Materials PVT. Ltd. (Nanoshel), India |
| 5.40. | Massachusetts Institute of Technology (MIT), USA |
| 5.41. | Max Planck Institute for Solid State Research, Germany |
| 5.42. | MER Corporation, USA |
| 5.43. | Mitsui Co., Ltd, Japan |
| 5.44. | Mknano, Canada |
| 5.45. | Nano-C, USA |
| 5.46. | NanoCarbLab (NCL), Russia |
| 5.47. | Nano Carbon Technologies Co., Ltd. (NCT) |
| 5.48. | Nanocomb Technologies, Inc. (NCTI), USA |
| 5.49. | Nanocs, USA |
| 5.50. | Nanocyl s.a., Belgium |
| 5.51. | NanoIntegris, USA |
| 5.52. | NanoLab, Inc., USA |
| 5.53. | NanoMas Technologies, USA |
| 5.54. | Nano-Proprietary, Inc., USA |
| 5.55. | Nanoshel, Korea |
| 5.56. | Nanostructured & Amorphous Materials, Inc., USA |
| 5.57. | Nanothinx S.A. , Greece |
| 5.58. | Nantero, USA |
| 5.59. | National Institute of Advanced Industrial Science and Technology (AIST), Japan |
| 5.60. | NEC Corporation, Japan |
| 5.61. | New Jersey Institute of Technology (NJIT), USA |
| 5.62. | Noritake Co., Japan |
| 5.63. | Northeastern University, Boston, USA |
| 5.64. | Optomec, USA |
| 5.65. | Pennsylvania State University, USA |
| 5.66. | PETEC (Printable Electronics Technology Centre), UK |
| 5.67. | Rice University, USA |
| 5.68. | Rutgers University, USA |
| 5.69. | Samsung Electronics, Korea |
| 5.70. | SES Research, USA |
| 5.71. | Shenzhen Nanotechnologies Co. Ltd. (NTP) |
| 5.72. | Showa Denko Carbon, Inc. (SDK), USA |
| 5.73. | ST Microelectronics, Switzerland |
| 5.74. | SouthWest NanoTechnologies (SWeNT), USA |
| 5.75. | Sungkyunkwan University Advanced Institute of Nano Technology (SAINT), Korea |
| 5.76. | Sun Nanotech Co, Ltd., China |
| 5.77. | Surrey NanoSystems, UK |
| 5.78. | Thomas Swan & Co. Ltd., UK |
| 5.79. | Toray Industries, Japan |
| 5.80. | Tsinghua University, China |
| 5.81. | Unidym, Inc., USA |
| 5.82. | University of California Los Angeles (UCLA), USA |
| 5.83. | University of Cincinnati (UC), USA |
| 5.84. | University of Michigan, USA |
| 5.85. | University of Oklahoma, USA |
| 5.86. | University of Pittsburgh, USA |
| 5.87. | University of Southern California (USC), USA |
| 5.88. | University of Stanford, USA |
| 5.89. | University of Stuttgart, Germany |
| 5.90. | University of Surrey, UK |
| 5.91. | University of Texas at Austin, USA |
| 5.92. | University of Tokyo, Japan |
| 5.93. | University of Wisconsin-Madison, USA |
| 5.94. | Vorbeck Materials Corp, USA |
| 5.95. | Wisepower Co., Ltd., Korea |
| 5.96. | XG Sciences, USA |
| 5.97. | Xintek Nanotechnology Innovations, USA |
| 5.98. | Y-Carbon |
| 5.99. | Zoz GmbH, Germany |
| 5.100. | Zyvex, Inc., USA |
| 6. | NETWORK PROFILES |
| 6.1. | CONTACT |
| 6.2. | Inno.CNT |
| 6.3. | National Technology Research Association (NTRA) |
| 7. | FORECASTS AND COSTS |
| 7.1. | Market Opportunity and roadmap for Carbon Nanotubes and Graphene |
| 7.1. | Supercapacitors |
| 7.1. | Market forecast by component type for 2010 to 2020 in US $ billions, for printed and potentially printed electronics including organic, inorganic and composites |
| 7.2. | Costs of SWeNTs |
| 7.2. | Market forecast by component type for 2010 to 2020 in US $ billions, for printed and potentially printed electronics including organic, inorganic and composites |
| 7.2. | Costs of SWCNTs |
| 7.3. | New Focus for Printed Electronics - the importance of flexible electronics |
| 7.3. | Chengdu Organic Chemicals Co. Ltd. (Timesnano) |
| 7.3. | SES Research |
| 7.4. | Nanothinx S.A. (price per gram in Euros) |
| 7.4. | HeJi Inc |
| 7.4. | Focus on invisible electronics |
| 7.5. | Shakeout in organics |
| 7.5. | The percentage of printed and partly printed electronics that is flexible 2010-2020 |
| 7.5. | Nanocs |
| 7.6. | Arry International Group |
| 7.6. | Evolution of printed electronics structures |
| 7.6. | Market pull |
| 7.7. | Carbon Solutions |
| 7.8. | Carbolex |
| 7.9. | Cheaptubes |
| 7.10. | Helix Material Solutions |
| 7.11. | MER Corporation |
| APPENDIX 1: GLOSSARY | |
| APPENDIX 2: IDTECHEX PUBLICATIONS AND CONSULTANCY | |
| TABLES | |
| FIGURES |
This report covers the latest work from 78 organizations around the world
보고서 통계
| Pages | 228 |
|---|---|
| Tables | 19 |
| Figures | 73 |
| Companies | 100 |
| 전망 | 2020 |
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