EVパワートレインの未来: SiC、GaN、パワーエレクトロニクスの進化

SiC MOSFETs have increasingly captured market share from Si IGBTs for the power electronics in EVs (electric vehicles). For many leading and emerging OEMs (original equipment manufacturers), it has become the technology of choice (e.g. Tesla, VW, Hyundai, BYD, Lucid, NIO, and many others). The automotive industry is known for its lengthy lead times when it comes to integrating new technologies. However, the successful deployment of Silicon Carbide (SiC) MOSFETs in the Tesla Model 3 in 2017, coupled with advancements across the supply chain, has propelled extensive adoption of SiC technology. Furthermore, technological innovations (e.g., 200mm wafers, substrate alternatives, integrated power electronics) that enhance performance, yield, and lower costs are coming to the fore. GaN has come in with the potential for even greater power densities than SiC. However, as an emerging technology, IDTechEx has not yet observed widespread adoption of GaN. The extensive commercial integration of GaN depends significantly on advancements in large-scale production, substrate technology, and processing techniques to satisfy the stringent requirements of the electric vehicle market.
In this webinar, IDTechEx will summarize the current market landscape concerning the wide bandgap semiconductors SiC and GaN and other EV power electronics market trends.
The webinar encompasses the following highlights:
  • High-level overview of EV power electronics, and the properties of Si, SiC, and GaN
  • Analysis of SiC MOSFET adoption, 800V architectures, and supply chain developments
  • Analysis of GaN's potential in EVs, and developing technologies
  • An examination of other trends in EV power electronics
  • An overview of the market analysis and evolution of power electronics in EVs up to 2035
This webinar shares some of the research from the new IDTechEx report, "Power Electronics for Electric Vehicles 2025-2035: Technologies, Markets, and Forecasts".