Flexible single-grain Si TFT (Printed Electronics Europe 2013)

Single-grain (SG) TFTs are transistors fabricated inside a large, location-controlled single-grain. I will review our achievements in high mobility flexible thin-film transistors based on the SG Si TFTs.

 

1. Using the a-Si prepared by LPCVD, Si grains with a diameter of 6 μm are successfully formed on predetermined positions.

 

2. By using a-Si prepared by sputtering, single-grain Si TFTs were fabricated on the polyimide coated substrate with a low-temperature

(350degree) process. Carrier mobilities of 309 cm2/Vs for electrons and 126 cm2/Vs for holes were obtained.

 

3. I will also review our recent result of SG-Si TFTs based on liquid-Si which enables printing of Si precursor for additive fabrication of Si TFTs.

Ryoichi Ishihara was born in 1967 in Japan. He received the B.E., M. E., and Ph. D. degrees from Department of Physical Electronics, Tokyo Institute of Technology, Japan in 1991, 1993, and 1996, respectively. His main research activities were excimer-laser crystallization of Si films, low-temperature chemical vapor deposition of silicon nitride film, fabrication of amorphous-Si and poly-Si thin-film transistors (TFTs) on a glass substrate.

 

Since 1996, he has been with Delft Institute of Microsystems and Nanoelectronics (DIMES), Delft University of Technology, Delft, The Netherlands, where he is currently an Associate Professor. His research has been focusing on location- and orientation-control of silicon grains through a novel excimer-laser crystallization process and fabrication and characterization of high-performance TFTs inside a single grain. He is in charge of a number of projects related to the thin film transistor technologies for 3D-ICs and flexible electronics.

 

His publications include more than 70 articles in various journals, more than 90 international conference proceedings, magazines, one book chapter, and more than 10 issued or pending patents. He has also given numerous invited and tutorial talks and co-edited several conference proceedings.

 

He is a recipient of Best Poster Award at EMRS 2009 spring meeting, "Outstanding poster award" by IDW (International Display Workshop) 2003, "Best paper award" by The International Workshop on Active-Matrix Liquid-Crystal Displays (AMLCD) in 2005 and Best paper award by The International Workshop on Active-Matrix Flat-Panel Displays (AMFPD) in 2007.

 

He serves on conference organizing committees for International Conference on Flexible and Printed Electronics (ICFPE2012) and ECS International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT).

 

He serves on numerous conference technical program committees, including European Solid-State Device Research Conference (ESSDERC), The Society for Information Display (SID), IEEE International Reliability Physics Symposium (IRPS), International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 2011), the ACM/IEEE International Symposium on Nanoscale Architectures, International Thin-Film Transistor Conference (ITC) and International workshop on Active-Matrix Flat-Panel Display (AMFPD).

 

He is a member of the IEEE Electron Device Society, the Society for Information Display, the Material Research Society, and the Japan Society of Applied Physics.

Delft University of Technology (http://www.tudelft.nl/) is one of the most prominent technical universities in Europe. Delft University of Technology is ranked 23rd in THE World Top 100 Universities for Engineering and Technology (6th in Europe). Delft University of Technology attracts a large number of students from all over the world, encourages science career among women, cooperates with several (inter)national industries and small-medium enterprises and has a successful incubator for spin-off companies.