Stability and Reliability of Organic Field-Effect Transistors (Printed Electronics Europe 2012)

Dr Canek Fuentes-Hernandez,
Georgia Institute of Technology
United States
Apr 04, 2012.


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Presentation Summary

• A bilayer gate dielectric leads to top-gate organic field-effect transistors that are air stable, can be operated under water and exposed to an oxygen plasma without significant changes of the transistor performance.
• Engineering compensating mechanisms into the transistor geometry leads to organic field-effect transistors with remarkable operational stability.
• Systematic reliability studies conducted by exposing top-gate organic field-effect transistors to oxygen and humid atmospheres, and its effects on device performance, are discussed.
• Optimization of the conditions for the fabrication of top-gate organic field-effect transistors with charge mobility values up to 2.8 cm2/Vs are described.

Speaker Biography (Canek Fuentes Hernandez)

Dr. Canek Fuentes Hernández was born and raised in Mexico City, Mexico. In 1998 he received a bachelor's degree in physics from the "Universidad Nacional Autonóma de México". In 2004 he received a PhD degree from the Optical Sciences Center at the University of Arizona. In 2005 he joined the Georgia Institute of Technology and the Center for Organic Photonics and Electronics as a postdoctoral fellow, where he continues to work as a Research Scientist.
Dr. Fuentes Hernández's research focuses on investigating the device physics and engineering of a wide range of thin-film all-optical, optoelectronic and microelectronic devices. His research includes fundamental investigations on the optical and electrical properties of organic and inorganic semiconducting materials, and the physical processes involved in change transport, charge injection and collection at heterogeneous interfaces, and on the linear and nonlinear optical interactions in semiconducting materials. His current research interests include: organic and metal-oxide thin-film transistors; organic solar cells; organic light-emitting diodes; high energy density capacitors; transparent metal-oxides, nanostructured metals and metal-dielectric multilayer structures for linear and nonlinear optical applications

Company Profile (Georgia Institute of Technology)

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The Georgia Institute of Technology is one of the leading public research universities in the United States of America. Georgia Tech's campus is located at the heart of the city of Atlanta, where 20,000 undergraduate and graduate students receive a focused, technologically based education. With top-ranked programs in the sciences, engineering, computing, architecture, and related areas, Georgia Tech is committed to educating future leaders in science and technology.
The Georgia Tech Center for Organic Photonics and Electronics (COPE) is a premier research and educational resource center, in the United States of America, that creates flexible organic photonic and electronic materials and devices that serve the information technology, telecommunications, energy, and defense sectors. COPE creates the opportunity for disruptive technologies by developing new materials with emergent properties and by providing new paradigms for device design and fabrication. COPE works closely with many of the research centers and institutes at Georgia Tech to provide a focal point for campus-wide efforts on functional organic optical and electronic materials; fostering the spirit of inclusiveness and cooperation that typifies Georgia Tech.
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