Will We See GaN HEMTs in Electric Vehicle Power Electronics Devices?

24 September 2021 by Luke Gear
Silicon carbide (SiC) and gallium nitride (GaN) are the new kids on the block when it comes to semiconductor power devices. Comparatively, traditional silicon has limitations in high temperature and high voltage operation, limitations important to overcome in the continuous grind for ever greater vehicle range and performance. In electric vehicle power electronics, SiC MOSFETs currently have a much greater presence than GaN HEMTs - why?
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